This work introduces the use of GradedChannel SOI MOSFETs to make analog current mirrors and compare their performance with those made with conventional fully depleted SOI transistors. It is demonstrated that Graded-Channel MOSFETs can provide higher precision current mirror with enhanced output swing. Also lesser modifications of the output characteristics due to the self-heating effect than i...

SOI technology has received high attention for the future high density DRAM applications. The two major requirements in any DRAM technology are long retention time and high charging efficiency. This paper discusses the disadvantages of using bulk silicon and Partially Depleted SOI devices in these terms. It is shown that a DRAM cell built with fully depleted SOI MOSFETs can store data for a lon...

A new small-signal model for fully depleted silicon-oninsulator (FD-SOI) MOSFETs operating at RF frequencies is presented. The model accounts for the non-quasi-static effect by determining model parameters using a curve fitting procedure to reproduce the frequency response of FD-SOI MOSFETs. The accuracy of the model is validated by comparison of S parameters with measured results in the range ...

We present a silicon-on-insulator (SOI) pass-transistor logic (PTL) gate with an active body bias control circuit and compare the proposed PTL gate with other types of PTL gates with different body bias circuits in two different 0.13μm SOI CMOS technologies. The experimental results show that the proposed SOI PTL gate using the body bias controlled technique is superior in terms of performance ...

This paper describes 0.18um CMOS silicon-on-insulator (SOI) technology and design techniques for SOI RF switch designs for wireless applications. The measured results of SP4T (single pole four throw) and SP8T (single pole eight throw) switch reference designs are presented. It has been demonstrated that SOI RF switch performance, in terms of power handling, linearity, insertion loss and isolati...

Using a modified ionization model based on nonlocal impact ionization, Miller's relationship is examined for typical reach-through collector VLSI bipolar transistors with collector epi-thickness between 0.025 and 1 /im. The empirical parameter n in Miller's relationship is evaluated under nonlocal impact ionization conditions within the useful range of current gain which corresponds to 0.1 > 1 ...

[1] Time series for the Southern Oscillation Index (SOI) and global tropospheric temperature anomalies (GTTA) are compared for the 1958 2008 period. GTTA are represented by data from satellite microwave sensing units (MSU) for the period 1980–2008 and from radiosondes (RATPAC) for 1958–2008. After the removal from the data set of short periods of temperature perturbation that relate to near-equ...