Nanostructured Si as the high efficiency photoelectrode material is hard to keep stable in aqueous for water splitting. Capping a passivation layer on the surface of Si is an effective way of protecting from oxidation. However, it is still not clear in the different mechanisms and effects between insulating oxide materials and oxide semiconductor materials as passivation layers. Here, we compar...

Selective emitters have been an important research subject for crystalline silicon solar cells for decades. It is being used in production for high efficiency solar cells. In this study, selective diffusion barriers have been used to produce selective emitters. This method allows easy control of the lightly doped areas. Experimentally, selectivity has been confirmed and lightly doped sheet resi...

Thermal atomic layer deposition (ALD)-grown AlN passivation layer is applied on AlGaN/GaN-on-Si HEMT, and the impacts on drive current and leakage current are investigated. The thermal ALD-grown 30-nm amorphous AlN results in a suppressed off-state leakage; however, its drive current is unchanged. It was also observed by nano-beam diffraction method that thermal ALD-amorphous AlN layer barely e...

Effect of Light intensity on the I-V characteristics of LaF3/PS heterojunction has been investigated in this report. LaF3 layers have been deposited by a novel chemical bath deposition (CBD) technique. With this simple technique LaF3 produced as LaCl3 are made to react with hydrofluoric (HF) acid on the porous silicon substrate. This enables direct deposition of LaF3 on the pore walls of the po...

Recently, AlN plasma-enhanced atomic layer deposition (ALD) passivation technique had been proposed and investigated for suppressing the dynamic on-resistance degradation behavior of high-electron-mobility transistors (HEMTs). In this paper, a novel gate dielectric and passivation technique for GaN-on-Si AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) is pr...

Despite the unique properties of black phosphorus (BP) and phosphorene, including high carrier mobility and in-plane anisotropy, their stability has been hampered by significant crystal deterioration upon exposure to oxygen and water. Herein, we investigate the chemical stability of MoS2-passivated black phosphorus (BP) or bilayer (2L) phosphorene van der Waals (vdW) heterostructures using the ...

As industrially produced solar cells become thinner and more efficient, silicon nitride (SiN) films are becoming increasingly important. At present, the favored means of producing these films is by remote plasma-enhanced chemical vapour deposition (RPECVD). In this paper, using films produced by an industrial Roth & Rau SiNA RPECVD reactor, we investigate the surface passivation qualities of Si...

Hydrogenated intrinsic amorphous silicon ((i) a-Si:H) layers deposited on n-type crystalline silicon (c-Si) by plasma enhanced chemical vapour deposition (PECVD) are investigated during long-time thermal treatment (100 h at 200°C) with regard to the depth profile of hydrogen in the a-Si layer and its diffusion into the c-Si bulk. The morphology of the (i) a-Si:H is manipulated by the PECVD proc...

We report substantial improvements and modulation in the photocurrent (PC) and photoluminescence (PL) spectra of monolayer MoS2 taken under electrostatic and ionic liquid gating conditions. The photocurrent and photoluminescence spectra show good agreement with a dominant peak at 1.85eV. The magnitude of the photoluminescence can be increased 300% by ionic liquid gating due to the passivation o...

Colloidal semiconductor nanocrystals, with intense and sharp-line emission between red and near-infrared spectral regions, are of great interest for optoelectronic and bio-imaging applications. The growth of an inorganic passivation layer on nanocrystal surfaces is a common strategy to improve their chemical and optical stability and their photoluminescence quantum yield. In particular, cation ...