نتایج جستجو برای: optoelectronic device

تعداد نتایج: 684827  

Journal: :The Analyst 2013
Bernhard Lamprecht Andreas Tschepp Merima Čajlaković Martin Sagmeister Volker Ribitsch Stefan Köstler

A novel optical sensor device monolithically integrated on a glass capillary is presented. Therefore, we took advantage of the ability to fabricate organic optoelectronic devices on non-planar substrates. The functionality of the concept is demonstrated by realizing an integrated oxygen sensor based on luminescence decay time measurement.

Journal: :Small 2021

In article number 2005925, Xian Huang and co-workers develop a multi-channel flexible optoelectronic fiber device that consists of fibers, microelectrode arrays, miniaturized wireless circuit. The combined configuration optical fibers electronics allows stimulation in selective wavelengths guided by the while conducting distributed, high-throughput biopotential chemical sensing using arrays.

2006
Brie Howley Xiaolong Wang Yihong Chen Ray T. Chen

A 4-bit polymer optoelectronic true time delay device is demonstrated. The device is composed of monolithically integrated, low loss, passive polymer waveguide delay lines and 2x2 polymer thermo-optic switches. Waveguide junction offsets and air trenches simultaneously reduce the bending loss and device area. Simulations are used to optimize the trench and offset structures for fabrication. The...

2016
Gustav Nylund Kristian Storm Sebastian Lehmann Federico Capasso Lars Samuelson

III−V semiconductor heterostructures are important components of many solid-state optoelectronic devices, but the ability to control and tune the electrical and optical properties of these structures in conventional device geometries is fundamentally limited by the bulk dimensionality and the inability to accommodate lattice-mismatched material combinations. Here we demonstrate how semiconducto...

2016
Laxmi Karki Gautam Maxwell M. Junda Hamna F. Haneef Robert W. Collins Nikolas J. Podraza

Optimization of thin film photovoltaics (PV) relies on characterizing the optoelectronic and structural properties of each layer and correlating these properties with device performance. Growth evolution diagrams have been used to guide production of materials with good optoelectronic properties in the full hydrogenated amorphous silicon (a-Si:H) PV device configuration. The nucleation and evol...

Journal: :Nano letters 2013
Moh R Amer Shun-Wen Chang Rohan Dhall Jing Qiu Stephen B Cronin

We investigate the electronic and optoelectronic properties of quasi-metallic nanotube pn-devices, which have smaller band gaps than most known bulk semiconductors. These carbon nanotube-based devices deviate from conventional bulk semiconductor device behavior due to their low-dimensional nature. We observe rectifying behavior based on Zener tunneling of ballistic carriers instead of ideal dio...

Journal: :Nanoscale 2014
Junpeng Lu Hongwei Liu Suzi Deng Minrui Zheng Yinghui Wang Jeroen A van Kan Sing Hai Tang Xinhai Zhang Chorng Haur Sow Subodh G Mhaisalkar

In this work, we report a novel and feasible strategy for the practical applications of one-dimensional ultrasensitive phototransistors made of tungsten-doped VO2 single nanowires. The photoconductive response of the single nanowire device was investigated under different visible light excitations (405 nm, 532 nm, and 660 nm). The phototransistor device exhibited ultrafast photoresponse, high r...

2014
Wenchao Zhao Long Ye Shaoqing Zhang Bin Fan Mingliang Sun Jianhui Hou

Interfacial buffer layers often attribute the improved device performance in organic optoelectronic device. Herein, a water-soluble hydrochloric acid doped polyanilines (HAPAN) were utilized as p-type electrode buffer layer in highly efficient polymer solar cells (PSC) based on PBDTTT-EFT and several representative polymers. The PBDTTT-EFT-based conventional PSC featuring ultrathin HAPAN (1.3 n...

2017
Jyun-Yi Li Sheng-Po Chang Ming-Hung Hsu Shoou-Jinn Chang

We investigated the electrical and optoelectronic properties of a magnesium zinc oxide thin-film phototransistor. We fabricate an ultraviolet phototransistor by using a wide-bandgap MgZnO thin film as the active layer material of the thin film transistor (TFT). The fabricated device demonstrated a threshold voltage of 3.1 V, on-off current ratio of 10⁵, subthreshold swing of 0.8 V/decade, and m...

The research in new organic π-conjugated molecules with specific properties has become one of the most interesting topics in fields of materials chemistry. These materials are promising for optoelectronic device technology such as solar cells. On the other hand, the use of low band gap materials is a viable method for better harvesting of the solar spectrum and increasing its efficiency. The Co...

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