نتایج جستجو برای: negative differential resistance ndr

تعداد نتایج: 1150770  

2014
Xiaoqing Deng Zhenhua Zhang Guiping Tang Zhiqiang Fan Huali Zhu Changhu Yang

Spin transport features of the n-type doping zigzag graphene nanoribbons (ZGNRs) with an edge contact are investigated by first principle methods, where ZGNRs are C-H2 bonded at one edge while C-H bonded at the other to form an asymmetric edge hydrogenation. The results show that a perfect spin filtering effect (100%) in such ZGNR nanojunctions can be achieved in a very large bias region for th...

2002
David P. Nackashi Paul D. Franzon

Recently, several mechanisms have been proposed as a basis for designing molecular electronic logic switching elements. Many two terminal molecular devices functioning as diodes have been synthesized with responses similar to silicon devices such as rectifying and resonant tunneling diodes. In this paper, the feasibility of integrating these molecular diodes into current circuit architectures i...

2007
F. Shoucair Ljiljana Trajkovic

We investigate analytically and via simulations one-port circuits consisting of two bipolar junction transistors (BJT’s) and a few linear resistors connected in a feedback structure. These circuits possess topologies and parameter values such that their terminal one-port i v characteristics exhibit a negative differential resistance (NDR) region. These structures have been used in the past to m...

Journal: :Nanoscale 2013
Wenzhi Wu Wanlin Guo Xiao Cheng Zeng

Graphyne, a two-dimensional carbon allotrope like graphene but containing doubly and triply bonded carbon atoms, has been proven to possess amazing electronic properties as graphene. Although the electronic, optical, and mechanical properties of graphyne and graphyne nanoribbons (NRs) have been previously studied, their electron transport behaviors have not been understood. Here we report a com...

1998
Augusto Benvenuti Mark R. Pinto

Because of the interaction between self-heating and hot carriers effects, neither isothermal nor conventional macrothermal models are adequate for the simulation of state-of-the-art power devices; instead, a detailed electro-thermal model accounting for nonstationary transport, such as the Thermal-Fully Hydrodynamic (T-FH) model, is required. We apply a one-dimensional (1-D) implementation of s...

1997
M. J. Avedillo J. M. Quintana H. Pettenghi P. M. Kelly C. J. Thompson

This Letter presents a novel and extremely compact circuit topology able to implement a generalized threshold logic function with two thresholds. The circuit consists of resonant tunnelling diodes (RTDs) and heterostructure field effect transistors (HFETs). Introduction: Resonant tunneling devices are nowadays considered the most mature type of quantum-effect devices. They are already operating...

Journal: :Journal of the American Chemical Society 2005
Xiaoyin Xiao Larry A Nagahara Adam M Rawlett Nongjian Tao

We have studied electron transport properties of unsubstituted oligo(phenylene ethynylene) (OPE) (1) and nitro-substituted OPE (2) covalently bound to two gold electrodes. The conductance values of single 1 and 2 are approximately 13 and approximately 6 nS, respectively. In addition to a decrease in the conductance, the presence of the nitro moiety leads to asymmetric I-V characteristics and a ...

2012
Chih Chin Yang Yen Chun Lin Hsiao Hsuan Cheng

Well-defined experimental and simulating single peak to valley current density ratio (PVCDR) resonant tunneling electronic circuit (RTEC) element is proposed in this research. The variation of passive element value in RTEC structure is explored using simulation method, which obtains the optimum PVCDR values about 66. The simulating peak current density (PCD) value is such high as 38 mA. Even th...

Journal: :Nano letters 2015
Rusen Yan Sara Fathipour Yimo Han Bo Song Shudong Xiao Mingda Li Nan Ma Vladimir Protasenko David A Muller Debdeep Jena Huili Grace Xing

van der Waals (vdW) heterojunctions composed of two-dimensional (2D) layered materials are emerging as a solid-state materials family that exhibits novel physics phenomena that can power a range of electronic and photonic applications. Here, we present the first demonstration of an important building block in vdW solids: room temperature Esaki tunnel diodes. The Esaki diodes were realized in vd...

Journal: :IEEE Journal of the Electron Devices Society 2021

This paper demonstrates the critical role that Ferroelectric (FE) layer thickness (tFE) plays in Negative Capacitance (NC) transistors connecting device and circuit levels together. The study is done through fully-calibrated TCAD simulations for a 14nm FDSOI technology node, exploring impact of tFE on figures merit n-type p-type devices, voltage transfer characteristic (VTC) noise margin invert...

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