Gallium oxide nanowires were synthesized by electric arc discharge of GaN powders mixed with a small amount of Ni and Co. The crystal structure of nanowires was determined by multi-channel X-ray di!ractometry (MC-XRD), FT-Raman spectroscopy and transmission electron microscopy (TEM). The analyzed results clearly show that the synthesized nanowires are monoclinic gallium oxide (b-Ga 2 O 3 ). Fin...

We have demonstrated a simple approach to the synthesis of fluorescent trigonal tellurium (t-Te) nanowires in aqueous solution at room temperature. The t-Te nanowires were prepared from the reduction of tellurium dioxide (TeO2) with concentrated hydrazine solution through deposition of Te atoms that were reduced from telluride ions (Te) and dissolved from amorphous tellurium (a-Te) nanoparticle...

High enhancement of fluorescence emission, improved fluorophore photostability, and significant reduction of fluorescence lifetimes have been obtained from high aspect ratio (>100) silver (Ag) nanowires. These quantities are found to depend on the surface loading of Ag nanowires on glass slides, where the enhancement of fluorescence emission increases with the density of nanowires. The surface ...

Co(2+)-doped CdSe colloidal nanowires with tunable size and dopant concentration have been prepared by a solution-liquid-solid (SLS) approach for the first time. These doped nanowires exhibit anomalous photoluminescence temperature dependence in comparison with undoped nanowires.

The Seebeck coefficient, electrical conductivity, and thermal conductivity of individual chromium disilicide nanowires were characterized using a suspended microdevice and correlated with the crystal structure and growth direction obtained by transmission electron microscopy on the same nanowires. The obtained thermoelectric figure of merit of the nanowires was comparable to the bulk values. We...

We report on magnetoresistance oscillations in superconducting NbNx nanowires synthesized through ammonia gas annealing of NbSe3 precursor nanostructures. Though the transverse dimensions of the nanowires are much larger than the superconducting coherence length, the voltage-current characteristics of these nanowires at low temperatures are reminiscent of onedimensional superconductors where qu...

We report electrical and optoelectrical properties of a cross-junction of two semiconducting nanowires. Semiconducting nanowires and their junction play an important role in nanonetwork device. By mechanically manipulating the nanowires, cross-junction nanodevices are fabricated on SiO2/Si substrate using VO2 and ZnO nanowires. These junctions are formed across prepatterned two-probe Au electro...

Diameter tuning of [Formula: see text]-Ga2O3 nanowires using chemical vapor deposition technique have been investigated under various experimental conditions. Diameter of root grown [Formula: see text]-Ga2O3 nanowires having monoclinic crystal structure is tuned by varying separation distance between metal source and substrate. Effect of gas flow rate and mixer ratio on the morphology and diame...

Crystalline boron nanowires were grown on Pt coated sapphire substrates using pulsed laser ablation at different temperatures under a pressure of 50 Pa. High-resolution TEM and transmission electron diffraction (TED) analyses were performed to determine the crystal structure of these nanowires. These nanowires had diameters ~100 nm and lengths in the micrometer range. Systematic analyses showed...

We report the growth of high density silicon Oxide (SiOx) nanowires at an elevated temperature. The nanowires density is enhanced by inserting a thin layer of chromium metal in gold/Si catalyst system. The SiOx nanowires were grown with gold/chromium catalysts stack layer on the Si substrate at different temperatures ranging from 1050oC to 1150oC. Under the catalysis reaction of the gold/chromi...