Scaling challenges and limitations of conventional silicon transistors have led the designers to apply novel nano-technologies. One of the most promising and possible nano-technologies is CNT (Carbon Nanotube) based transistors. CNFET have emerged as the more practicable and promising alternative device compared to the other nanotechnologies. This technology has higher efficiency compared to th...

A compact model for an IC Lateral Diffused MOSFET is developed using the Lumped-Charge Methodology[1]. Model equations and key performance characteristics are documented. They satisfy the requirements of Power MOSFET models[2], unlike the competitive macromodels developed from short-channel, low-power MOSFET models.

The aims of this study were to characterize reinforced metal-oxide-semiconductor field-effect transistor (MOSFET) dosimeters to assess the measurement uncertainty, single exposure low-dose limit with acceptable accuracy, and the number of exposures required to attain the corresponding limit of the thermoluminescent dosimeters (TLD). The second aim was to characterize MOSFET dosimeter sensitivit...

A novel asymmetric MOSFET with no LDD on the source side is simulated on bulk-Si using a device simulator (SILVACO). In order to overcome the problems of the conventional asymmetric process, a novel asymmetric MOSFET using mesa structure and sidewall spacer gate is proposed which provides self-alignment process, aggressive scaling, and uniformity. First of all, we have simulated to compare the ...

Employment of the <100> channel direction in a strained-Si0.8Ge0.2 p-MOSFET provides a hole mobility enhancement as large as 25% and a parasitic resistance reduction of 20% compared to a <110> strained-Si0.8Ge0.2 channel p-MOSFET, which already has a better mobility and threshold voltage roll-off than the Si p-MOSFET. These results suggest that the <100> strained-SiGe-channel p-MOSFET can be us...

The static characteristics of CREE 1200V/100A 4H-SiC MOSFET have been fully characterized at temperatures ranging from 0°C to 150°C. The distinct characteristics of high power SiC MOSFET compared with the silicon counterparts are analyzed and explained. A novel physics-based analytical model for SiC MOSFET has been developed by using the MAST language and simulated with SABER software to expres...

The newest semiconductor devices on the market are MOSFET transistors based on the silicon carbide – SiC. This material has exclusive features thanks to which it becomes a better switch than Si – silicon semiconductor switch. There are some special features that need to be understood to enable the device’s use to its full potential. The advantages and differences of SiC MOSFETs in comparison wi...

We aim at constructing a common platform for compact model development based on the Verilog-A language for collaboration among different research groups. The project aims in particular at a framework for efficient development of multi-gate MOSFET models for circuit simulation. We have developed several prototypes of multi-gate MOSFET models based on different concepts till now. Phenomena expect...

A simple analytical model to predict the DC MOSFET behavior under electromagnetic interference (EMI) is presented. The model is able to describe the MOSFET performance in the linear and saturation regions under EMI disturbance applied to the gate. The model consists of a unique simple equivalent circuit based on a voltage dependent current source and a reduced number of parameters which can acc...