نتایج جستجو برای: mos2 oxide
تعداد نتایج: 180840 فیلتر نتایج به سال:
We report a controllable wet method for effective decoration of 2-dimensional (2D) molybdenum disulfide (MoS2) layers with Au nanoparticles (NPs). Au NPs can be selectively formed on the edge sites or defective sites of MoS2 layers. The Au-MoS2 nano-composites are formed by non-covalent bond. The size distribution, morphology and density of the metal nanoparticles can be tuned by changing the d...
Molybdenum disulfide (MoS2 ) is a promising candidate for electronic and optoelectronic applications. However, its application in light harvesting has been limited in part due to crystal defects, often related to small crystallite sizes, which diminish charge separation and transfer. Here we demonstrate a surface-engineering strategy for 2D MoS2 to improve its photoelectrochemical properties. C...
The linear and nonlinear optical properties of thin MoS2 layers exfoliated on an Au/SiO2 substrate were investigated both numerically and experimentally. It was found that the MoS2 layers with different thicknesses exhibited different colors on the gold film. The reflection spectra of the MoS2 layers with different thicknesses were calculated by using the finite-difference time-domain technique...
MoS2 is widely used in many fields including spin-valleytronics, logic transistors, light emitting devices, clean energy and biology. However, controllable synthesis of two-dimensional MoS2 sheets remains a great challenge. We report the formation of round-shaped monolayer MoS2 domains with a tunable size and the shape transformation from triangle to round. A qualitative interpretation of the f...
MoS2 is a layered two-dimensional semiconductor with a direct band gap of 1.8 eV. The MoS2/bulk semiconductor system offers a new platform for solar cell device design. Different from the conventional bulk p-n junctions, in the MoS2/bulk semiconductor heterostructure, static charge transfer shifts the Fermi level of MoS2 toward that of bulk semiconductor, lowering the barrier height of the form...
Size-controlled synthesis of luminescent quantum dots of MoS2 (≤2 layers) with narrow size distribution, ranging from 2.5 to 6 nm, from their bulk material using a unique electrochemical etching of bulk MoS2 is demonstrated. Excitation-dependent photoluminescence emission is observed in the MoS2 QDs. "As-synthesized" MoS2 QDs also exhibit excellent electrocatalytic activity towards hydrogen evo...
At present, composite photocatalysts containing MoS2 as a co-catalyst and a subjective semiconductor material are usually obtained via various complex reduction methods using NH4MoS4 or Na2MoO4 as a precursor. In this work, a simple method was proposed to synthesize MoS2-TiO2 composite photocatalysts via mechanochemistry using MoS2 as a direct precursor. 4.0% MoS2-TiO2 after ball-milling at 300...
Achieving tunability of two dimensional (2D) transition metal dichalcogenides (TMDs) functions calls for the introduction of hybrid 2D materials by means of localized interactions with zero dimensional (0D) materials. A metal-semiconductor interface, as in gold (Au) - molybdenum disulfide (MoS2), is of great interest from the standpoint of fundamental science as it constitutes an outstanding pl...
The electron dynamics in heterostructures formed by multilayer graphite and monolayer or bulk MoS2 were studied by femtosecond transient absorption measurements. Samples of monolayer MoS2-multilayer graphite and bulk MoS2-multilayer graphite were fabricated by exfoliation and dry transfer techniques. Ultrafast laser pulses were used to inject electron-hole pairs into monolayer or bulk MoS2. The...
Molybdenum disulphide (MoS2) thin films have received increasing interest as device-active layers in low-dimensional electronics and also as novel catalysts in electrochemical processes such as the hydrogen evolution reaction (HER) in electrochemical water splitting. For both types of applications, industrially scalable fabrication methods with good control over the MoS2 film properties are cru...
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