نتایج جستجو برای: molybdenum disulfide

تعداد نتایج: 31691  

2014
Weixia Gu Jiaoyan Shen Xiying Ma

Two-dimensional (2D) molybdenum disulfide (MoS2) is an attractive alternative semiconductor material for next-generation low-power nanoelectronic applications, due to its special structure and large bandgap. Here, we report the fabrication of large-area MoS2 nanodiscs and their incorporation into back-gated field effect transistors (FETs) whose electrical properties we characterize. The MoS2 na...

2017
Geonwook Yoo Sol Lea Choi Sang Jin Park Kyu-Tae Lee Sanghyun Lee Min Suk Oh Junseok Heo Hui Joon Park

Color-selective or wavelength-tunable capability is a crucial feature for two-dimensional (2-D) semiconducting material-based image sensor applications. Here, we report on flexible and wavelength-selective molybdenum disulfide (MoS2) phototransistors using monolithically integrated transmission Fabry-Perot (F-P) cavity filters. The fabricated multilayer MoS2 phototransistors on a polyarylate su...

Journal: :Nanoscale 2015
Tu Hong Bhim Chamlagain Tianjiao Wang Hsun-Jen Chuang Zhixian Zhou Ya-Qiong Xu

We investigate the photocurrent generation mechanisms at a vertical p-n heterojunction between black phosphorus (BP) and molybdenum disulfide (MoS2) flakes through polarization-, wavelength-, and gate-dependent scanning photocurrent measurements. When incident photon energy is above the direct band gap of MoS2, the photocurrent response demonstrates a competitive effect between MoS2 and BP in t...

Journal: :Science 2012
Hemamala I Karunadasa Elizabeth Montalvo Yujie Sun Marcin Majda Jeffrey R Long Christopher J Chang

Inorganic solids are an important class of catalysts that often derive their activity from sparse active sites that are structurally distinct from the inactive bulk. Rationally optimizing activity is therefore beholden to the challenges in studying these active sites in molecular detail. Here, we report a molecule that mimics the structure of the proposed triangular active edge site fragments o...

Journal: :ACS nano 2015
Hisato Yamaguchi Jean-Christophe Blancon Rajesh Kappera Sidong Lei Sina Najmaei Benjamin D Mangum Gautam Gupta Pulickel M Ajayan Jun Lou Manish Chhowalla Jared J Crochet Aditya D Mohite

A fundamental understanding of the intrinsic optoelectronic properties of atomically thin transition-metal dichalcogenides (TMDs) is crucial for its integration into high performance semiconductor devices. Here, we investigate the transport properties of chemical vapor deposition (CVD) grown monolayer molybdenum disulfide (MoS2) under photoexcitation using correlated scanning photocurrent micro...

2015
Wei Bao Nicholas J. Borys Changhyun Ko Joonki Suh Wen Fan Andrew Thron Yingjie Zhang Alexander Buyanin Jie Zhang Stefano Cabrini Paul D. Ashby Alexander Weber-Bargioni Sefaattin Tongay Shaul Aloni D. Frank Ogletree Junqiao Wu Miquel B. Salmeron P. James Schuck

Two-dimensional monolayer transition metal dichalcogenide semiconductors are ideal building blocks for atomically thin, flexible optoelectronic and catalytic devices. Although challenging for two-dimensional systems, sub-diffraction optical microscopy provides a nanoscale material understanding that is vital for optimizing their optoelectronic properties. Here we use the 'Campanile' nano-optica...

Journal: :Physical review letters 2012
Igor Popov Gotthard Seifert David Tománek

Studying the reason why single-layer molybdenum disulfide (MoS2) appears to fall short of its promising potential in flexible nanoelectronics, we find that the nature of contacts plays a more important role than the semiconductor itself. In order to understand the nature of MoS2/metal contacts, we perform ab initio density functional theory calculations for the geometry, bonding, and electronic...

2015
Hua-Min Li Daeyeong Lee Deshun Qu Xiaochi Liu Jungjin Ryu Alan Seabaugh Won Jong Yoo

Semiconducting two-dimensional crystals are currently receiving significant attention because of their great potential to be an ultrathin body for efficient electrostatic modulation, which enables to overcome the limitations of silicon technology. Here we report that, as a key building block for two-dimensional semiconductor devices, vertical p-n junctions are fabricated in ultrathin MoS₂ by in...

Journal: :Nanoscale 2014
Yanping Tang Dongqing Wu Yiyong Mai Hao Pan Jing Cao Chongqing Yang Fan Zhang Xinliang Feng

A novel 2D hybrid with MoS(2) nanocrystals strongly coupled on nitrogen-enriched graphene (MoS(2)/NG(g-C(3)N(4))) is realized by mild temperature pyrolysis (550 °C) of a self-assembled precursor (MoS(3)/g-C(3)N(4)-H(+)/GO). With rich active sites, the boosted electronic conductivity and the coupled structure, MoS(2)/NG(g-C(3)N(4)) achieves superior lithium storage performance.

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