نتایج جستجو برای: metal assisted chemical etching
تعداد نتایج: 688698 فیلتر نتایج به سال:
Metal-assisted chemical etching (MACE) has emerged as an effective method to fabricate high aspect ratio nanostructures. This requires a catalytic mask that is generally composed of metal. Here, we challenge the general view catalyst needs be metal by introducing oxide-assisted (OACE). We perform with oxides such RuO2 and IrO2 transposing materials used in electrocatalysis nanofabrication. Thes...
Porous silicon (PSi) is a versatile nanomaterial which has been utilized in several applications such as optical switching, drug delivery and sensors since its discovery in 1991. This material has been extensively investigated as an optical sensor due to its high surface area, high sensitivity and variety of optical transduction possibilities, e.g. changes in uorescence or reectance (interfer...
GaAs nanopillar arrays were successfully fabricated by metal-assisted chemical etching using Au nanodot arrays. The nanodot arrays were formed on substrates by vacuum deposition through a porous alumina mask with an ordered array of openings. By using an etchant with a high acid concentration and low oxidant concentration at a relatively low temperature, the area surrounding the Au/GaAs interfa...
Nanoporous and nonporous three-dimensional silicon nanowire arrays (SiNWAs) prepared with metal-assisted chemical etching method were investigated as photocatalysts in dye photodegradation systematically. In comparison with nonporous SiNWAs, nanoporous SiNWAs have higher surface area, larger pore volume, stronger light absorption and better photocatalytic activity. After the HF-treatment, the p...
An easy and low-cost method to transfer large-scale horizontally aligned Si nanowires onto a substrate is reported. Si nanowires prepared by metal-assisted chemical etching were assembled and anchored to fabricate multiwire photoconductive devices with standard Si technology. Scanning electron microscopy images showed highly aligned and successfully anchored Si nanowires. Current-voltage tests ...
We present broadband antireflective silicon (Si) nanostructures with hydrophobicity using a spin-coated Ag ink and by subsequent metal-assisted chemical etching (MaCE). Improved understanding of MaCE, by conducting parametric studies on optical properties, reveals a design guideline to achieve considerably low solar-weighted reflectance (SWR) in the desired wavelength ranges. The resulting Si n...
Background: The purpose of this study was to compare and evaluate the effects of metal primer on the shear bond strength of denture base resin to base metal alloy after electrolytic and laser etching. Materials and Methods: A total of 48 cobalt‐chromium (Co‐Cr) alloy specimens were fabricated. The specimens were divided into 6 groups of 8 specimens each. Group I: Sandblasting (control group). G...
We use metal-assisted chemical etching (MCE) method to fabricate nanostructured black silicon on the surface of C-Si. The Si-PIN photoelectronic detector based on this type of black silicon shows excellent device performance with a responsivity of 0.57 A/W at 1060 nm. Silicon nanocone arrays can be created using MCE treatment. These modified surfaces show higher light absorptance in the near-in...
A systematic study was conducted into the use of metal-assisted chemical etching (MacEtch) to fabricate vertical Si microwire arrays, with several models being studied for the efficient redox reaction of reactants with silicon through a metal catalyst by varying such parameters as the thickness and morphology of the metal film. By optimizing the MacEtch conditions, high-quality vertical Si micr...
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