In this work, a novel Silicon on Insulator (SOI) MOSFET is proposed and investigated. The drain and source electrode structures are optimized to enhance ON-current while global device temperature and hot carrier injection are decreased. In addition, to create an effective heat passage from channel to outside of the device, a silicon region has embedded in the buried oxide. In order to reduce th...

Systemic administration of drugs into the blood circulation is standard treatment for prevention of metastasis. However, systemic delivery cannot maintain sufficiently high concentrations of anticancer drugs in lymph nodes (LN). Here, we show that giving cisplatin (CDDP) using a lymphatic drug delivery system (LDDS) has the potential to treat false-negative metastatic LN. We found that in MXH10...

The device and circuit performance of a 20 nm gate length InGaAs and Ge hybrid CMOS based on an implant free quantum well (QW) device architecture is studied using a multiscale approach combining ensemble Monte Carlo simulation, drift-diffusion simulation, compact modelling, and TCAD mixedmode circuit simulation. We have found that the QW and doped substrate, used in the hybrid CMOS, help to re...

The contact resistance between source/drain electrodes and semiconductor layer is an important parameter affecting electron transporting performance in the thin film transistor (TFT). In this work, we introduced a transparent and the solution prossable single-walled carbon nanotube (SWCNT)/Al-doped ZnO nano particle (AZO NP) bilayer electrodes showing low contact resistance with indium-oxide (I...

InGaP/InGaAs doped-channel direct-coupled field-effect transistor logic (DCFL) with relatively low supple voltage is demonstrated by two-dimensional analysis. In the integrated enhancement/depletion-mode transistors, subband and two-dimensional electron gas (2DEG) are formed in the InGaAs strain channels, which substantially increase the channel concentration and decrease the drain-to-source sa...

The electrical properties of polymeric thin film transisitors (P-TFTs) based on poly(9,9-dioctylfluorene-cobithiophene) alternating copolymer (F8T2) have been studied. Device performance was compared for amorphous silicon nitride deposited by LPCVD and PECVD techniques, aluminum oxide deposited by sputtering, titanium oxide deposited by sputtering, and thermal silicon oxide gate dielectrics. A ...

By capactively coupling sensitive charge detectors (i.e. single-electron transistors SETs) to nanostructures such as quantum dots and two-dimensional systems, it is possible to investigate charge transport properties in extremely low conduction regimes where direct transport measurements are increasingly difficult. Ion-implanted nano-MOSFETs coupled to aluminium SETs have been constructed in or...