نتایج جستجو برای: leakage parameter

تعداد نتایج: 245023  

Jin liang Gao Juanjuan Li Jun Nan Shi hua Qi

The economic and environmental losses due to serious leakage in the urban water supply network have increased the effort to control the water leakage. However, current methods for leakage estimation are inaccurate leading to the development of ineffective leakage controls. Therefore, this study proposes a method based on the blind source separation theory (BSS) to calculate the leakage of water...

Journal: :journal of operation and automation in power engineering 2007
m. mirzaie a. azizi tousi

one of the important factors influencing outdoor insulators performance is pollution phenomenon. the pollution, especially during humidity condition, reduces superficial resistance of insulator and lead to a flow of leakage currents (lc) on the insulator surface, which may result in total flashover. the lc characteristics are affected by parameters such as nature and severity of pollution. loca...

2012
Kiran Agarwal Gupta Dinesh K Anvekar

Semiconductor technology has reached an end in the manufacture of conventional Metal Oxide semiconductor Field Effect Transistor (MOSFET). The continuous scaling of semiconductor devices has kept pace with Moore’s law and transistors below 1μm are grouped under deep sub-micron (DSM) technology node. But this trend seem to end beyond deep sub micron levels due to main design constraints such as ...

Journal: :IBM Journal of Research and Development 2003
Yoshinobu Nakagome Masashi Horiguchi Takayuki Kawahara Kiyoo Itoh

This paper describes low-voltage random-access memory (RAM) cells and peripheral circuits for standalone and embedded RAMs, focusing on stable operation and reduced subthreshold current in standby and active modes. First, technology trends in low-voltage dynamic RAMs (DRAMs) and static RAMs (SRAMs) are reviewed and the challenges of lowvoltage RAMs in terms of cell signal charge are clarified, ...

Journal: :Microelectronics Reliability 2005
C. Trapes Didier Goguenheim Alain Bravaix

I. Introduction By reducing the gate-oxide thickness (T OX), the proportion of injected tunneling carriers increases during stress so that MOSFET's parameters are slightly changed. In thicker oxides (T OX >3.5nm), Stress Induced Leakage Current (SILC) was a good marker of oxide degradation. In thinner oxide, gate oxide leakage current appears in depletion regime, SILC is recalled as Low Voltage...

2003
I Jekova

The success of ventricular defibrillation depends on many factors, but the time elapsed from the fibrillation onset is most important. The aim of this study was to assess the ECG peak frequency and periodicity changes during ventricular fibrillation. The fibrillation signal peak frequency decreased with elapsed time in N1=21 of the processed signals (62%). It fluctuated over a relatively consta...

2011
Kimberley J. Blackwood Jane Sykes Lela Deans Gerald Wisenberg Frank S. Prato

Introduction. Previously we proposed a cellular imaging technique to determine the surviving fraction of transplanted cells in vivo. Epicardial kinetics using Indium-111 determined the Debris Impulse Response Function (DIRF) and leakage coefficient parameters. Convolution-based modeling which corrected for these signal contributions indicated that (111)In activity was quantitative of cell viabi...

Journal: :IOP conference series 2021

Abstract There are four pillars in leakage management strategy for water distribution networks, consist of pressure management, speed repairs, active control, and asset management. Leakage can be managed by applying the right combination those factors strategy. This study conducted Malang City, East Java, Indonesia. The that influence physical loss system analyzed focusing on operational parame...

2017
Adnan Kiayani Muhammad Zeeshan Waheed Lauri Anttila Dani Korpi Marko Kosunen Jussi Ryynänen

This paper proposes an active radio frequency (RF) cancellation solution to suppress the transmitter (TX) passband leakage signal in radio transceivers supporting simultaneous transmission and reception. The proposed technique is based on creating an opposite-phase baseband equivalent replica of the TX leakage signal in the transceiver digital front-end through adaptive nonlinear filtering of t...

2010
Yongchan Ban Savithri Sundareswaran David Z. Pan

David Z. Pan The University of Texas at Austin Department of Electrical and Computer Engineering 2400 Speedway Austin, Texas 78712 Abstract. Since line-end roughness (LER) has been reported to be of the order of several nanometers and to not decrease as the device shrinks, it has evolved as a critical problem in sub-45-nm devices and may lead to serious device parameter fluctuations and perform...

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