نتایج جستجو برای: layered t gate
تعداد نتایج: 776318 فیلتر نتایج به سال:
objective: to measure the long-term linear hygroscopic expansion (lhe) of several materials using bulked and layered techniques. materials and methods: seven materials were used; fuji cap ii, fuji ii lc, photac-fil aplicap, vitremer, dyract, tetric and z100. ten specimens (6×4 mm) were made for each material using layered and bulked techniques (each group comprises five specimens). the specimen...
A proof-of-concept metal–insulator–semiconductor (MIS) AlGaN/GaN high-electron mobility transistor (HEMT) that uses a self-aligned 10 nm AlOx gate insulator and SiNx passivation in the device access regions was investigated. Self-alignment of the gate insulator to metal was achieved by utilizing a submicron tri-layer photoresist pattern to lift-off sequentially-deposited AlOx dielectric and Ni/...
The performance of a code tracking loop for a spread spectrum signal can be severely deteriorated in the presence of an interference signal. The interference signal is modeled as a signal with the same code but with a different delay and carrier frequency. The variance of the tracking delay error is derived in terms of loop bandwidth, chip duration, the interference and signal power and bandpas...
Inference of genetic networks from expression profile data is still one of the challenging works in the field of the microarray informatics. A good visualization tool would provide us a great insight into the interactions among the genes in the inferred networks. Here, we focus on the time series data of expression profiles, and discuss the method to draw a two-layered graph representing the ca...
We demonstrate the fabrication of sub-100 nm T-Gate structures using a single electron beam lithography exposure and tri-layer resist stack - PMMA/LOR/CSAR. Recent developments in modelling development were used to design process, which each is developed separately optimise resulting structure. By approach proximity correcting for full stack, we able independently vary gate length (50-100 nm) h...
In this paper, novel hybrid MOSFET(HMOS) structure has been proposed to reduce the gate leakage current drastically. This novel hybrid MOSFET (HMOS) uses source/drain-to-gate non-overlap region in combination with high-K layer/interfacial oxide as gate stack. The extended S/D in the non-overlap region is induced by fringing gate electric field through the high-k dielectric spacer. The gate leak...
BACKGROUND AND OBJECTIVES: This study aims down to evaluate the ability of chloride magnesium- aluminium- layered double hydroxides (4:1) for nitrate adsorption from the soil solution in successive cropping periods. METHODS: The study was conductedunder long-term cropping periods, including first crop): bell pepper; second crop: mentheae; third crop: cher...
In advance longwall mining, the safety of mine network, production rate, and consequently, economic conditions of a mine are dependent on the stability conditions of gate roadways. The gate roadway stability is a function of two important factors: 1) characteristics of the excavation damaged zone (EDZ) above the gate roadway and 2) loading effect due to the caving zone (CZ) above the longwall w...
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