43 A is an important water management practice in the midwestern United States to remove excess water from poorly drained areas and to provide traffi cable conditions for agricultural production. About 30% of the total land area and 50% of the crop land in Indiana is subsurface drained (Economic Research Service, 1987). Th ere are growing concerns about the potential negative environmental impa...

elite migration and brain drain trend in iran have undergone a dramatic ascent in the past few decades while we are seriously in need of educated manpower to help accomplish the 20-year national vision. so to consider brain drain is necessary and must be accounted by policymakers in all levels. in the upcoming paper, we study the brain drain as a social problem and elaborate a five-dimensional ...

This paper presents device simulations on the vertical silicon nanowire tunneling FET (VSiNW TFET). Simulations show that a narrow nanowire and thin gate oxide is required for good performance, which is expected even for conventional MOSFETs. The gate length also needs to be more than the nanowire diameter to prevent short channel effects. An effect more unique to TFET is the need for abrupt so...

This paper proposes a sleep transistor based minimum size inverter in BSIM4.3.0, 50nm CMOS technology with supply voltage of 1V, power dissipation of 46.28nW at 0.502V and maximum drain current of 70nA. The operating frequency is 1GHz. The disadvantage is decrease in voltage swing by 15% compared to the conventional CMOS Inverter of the same size, whereas the power dissipation is only 1.117% of...

A JFET-based circuit for realizing a precision and linear floating voltage-controlled resistance (VCR) is presented for use in analog multipliers and programmable analog circuits and as a resistance mirror. It uses a matched JFET pair along with an op amp based negative feedback for realizing a precision resistance and a feedback of the source and drain voltages to the gate for realizing a line...

In this work, the design of a novel low noise amplifier (LNA) based on 1μm gate-length InGaAs/InAlAs/InP pHEMT transistors is discussed. Designed for radio astronomy applications, this amplifier exploits a common drain configuration as an input stage and a common source inductive degeneration topology as an output stage. It exhibits a maximum gain of 30 dB within an input 1dB compression point ...

A InGaP/InGaAs/GaAs dual channel pseudomorphic HEMT (DCPHEMT) with interesting triple doped sheets having gate length 800nm is modeled and simulated by using 2-dimensional simulation package ATLAS from Silvaco. Different DC and microwave performances of the above device are analyzed and investigated to judge the potential of the device for highperformance digital device applications. Due to the...