نتایج جستجو برای: junctionless field effect transistor h dmg jlfet
تعداد نتایج: 2754831 فیلتر نتایج به سال:
abstract: this paper is the first study on the impact of ambient temperature on the electrical characteristics and high frequency performances of double gate armchair graphene nanoribbon field effect transistor (gnrfet). the results illustrate that the gnrfet under high temperature (ht-gnrfet) has the highest cut-off frequency, lowest sub-threshold swing, lowest intrinsic delay and power delay ...
The first experimental study of a new nanometer field-effect transistor with a single barrier in its one-dimensional channel is presented. At low temperatures and as charge density in the channel was varied, nine reproducible periodic oscillations of conductance, in addition to 2e2/h conductance plateaus, were observed before the onset of the first 2e’/h conductance plateau. It was found experi...
The double gate junctionless transistor (DG-JLT) has become the most promising device in sub nano-meter regime. DGJLT based circuits have improved performance and simpler fabrication than their inversion mode counterparts. This paper demonstrates design of different analog digital using DGJLT. Amplifiers inverters are basic building block electronic ICs. A MOS amplifier converts variation to so...
The current pilot study assessed the influence of N,N-dimethylglycine (DMG) on insulin sensitivity, glucose and fat metabolism, nutrient digestibility and reproductive performance of sows in the peripartal period. At day 105 of gestation, 25 sows were randomly assigned to the control (n = 13) or the DMG group (n = 12). Sows from the DMG group were supplemented with 1 g DMG/kg feed until day 3 o...
Post synthetically-modified UiO-66-NH 2 with a molecular cobaloxime [Co(DMG) Cl ] (DMG = dimethylglyoxime) catalyst displays excellent photo-(404 μmol g −1 h ) and electrocatalytic H evolution activity in an aqueous solution.
چکیده ندارد.
The piezoelectronic transistor (PET) has been proposed as a transduction device not subject to the voltage limits of field-effect transistors. The PET transduces voltage to stress, activating a facile insulator-metal transition, thereby achieving multigigahertz switching speeds, as predicted by modeling, at lower power than the comparable generation field effect transistor (FET). Here, the fabr...
Dual Metal Gate (DMG) technology was proposed to reduce the short channel effects (SCE’s) of double gate MOSFETs. But, DMG alone is not enough to rectify the problem of gate tunneling current due to thinning of oxide layer with device downscaling. So, the use of high-k dielectric as gate oxide is considered to overcome the gate tunneling effect. But, high gate dielectric thickness leads to high...
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