نتایج جستجو برای: insulator transition
تعداد نتایج: 274729 فیلتر نتایج به سال:
The Hubbard model with additional intersite interaction ‘V ’ ( the extended Hubbard model) is investigated by the correlator projection method (CPM). CPM is a newly developed numerical method which combines the equation-of-motion approach and the dynamical mean-field theory. Using this method, properties of the extended Hubbard Model at quarter filling are discussed with special emphasis on the...
The influence of Gd doping at La-site on the electrical transport properties and the colossal magnetoresistance of La0.7−xGdxSr0.3MnO3 (x = 0.00, 0.10, 0.15, 0.20, 0.30, 0.40, 0.50, 0.60, and 0.70) is studied. The experimental results indicate that the transport properties exhibit abnormal behavior under high doping condition. For x = 0.50, we find that a transition from metal to insulator occu...
The next generation of electronics is likely to incorporate various functional materials, including those exhibiting ferroelectricity, ferromagnetism and metal-insulator transitions. Metal-insulator transitions can be controlled by electron doping, and so incorporating such a material in transistor channels will enable us to significantly modulate transistor current. However, such gate-controll...
We study the nature of the zero-temperature phase transition between a d-wave superconductor and a Mott insulator in two dimensions. In this ‘‘quantum confinement transition,’’ spin and charge are confined to form the electron in the Mott insulator. Within a dual formulation, direct transitions from d-wave superconductors at half-filling to insulators with spin-Peierls ~as well as other! order ...
The ferroelectric polarization of perovskite oxides is much larger than implied by displacement of static ionic charges. We use an explicitly correlated scheme to investigate the phenomenon; charge transport is evaluated as a geometric quantum phase. Both covalence and electron-electron interaction enhance polarization in the weakly correlated regime. At higher values of the electron-electron i...
We investigate low-temperature transport properties of thin TiN superconducting films in the vicinity of the disorder-driven superconductor-insulator transition. In a zero magnetic field, we find an extremely sharp separation between superconducting and insulating phases, evidencing a direct superconductor-insulator transition without an intermediate metallic phase. At moderate temperatures, in...
A single electron transistor is used as a local electrostatic probe to study the underlying spatial structure of the metal-insulator transition in two dimensions. The measurements show that as we approach the transition from the metallic side, a new phase emerges that consists of weakly coupled fragments of the two-dimensional system. These fragments consist of localized charge that coexists wi...
In this Letter we construct a simple, controllable, two-dimensional model based on a topological band insulator. It has many attractive properties. (1) We obtain spin-charge separated solitons that are associated with dynamic pi fluxes. (2) These solitons obey Bose statistics and their condensation triggers a phase transition from a spin Hall insulator to an easy-plane ferromagnet. (3) It sugge...
We develop a model to investigate the insulator-conductor transition observed in a system of spherical metal particles suspended in a quasi-two-dimensional viscous liquid between planar electrodes when the voltage of the electrodes is increased. Our model captures the main ingredients of the process in experimental system, and reveals the insulator-conductor transition at a well-defined critica...
We study the nature of the superfluid-insulator quantum phase transition in a one-dimensional system of lattice bosons with off-diagonal disorder in the limit of a large integer filling factor. Monte Carlo simulations of two strongly disordered models show that the universality class of the transition in question is the same as that of the superfluid-Mott-insulator transition in a pure system. ...
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