Peripheral circulation is severely compromised in the advanced stages of peripheral arterial disease. Recently, it was shown that the application of -40 mmHg intermittent negative pressure (INP) to the lower leg and foot enhances macro- and microcirculation in healthy volunteers. In this case report, we describe the effects of INP treatment on four patients with lower limb ischemia and hard-to-...

Epitaxial layers of p-type indium phosphide (InP) have been grown by low pressure, metal organic chemical vapour deposition (LP-MOCVD) using diethylzinc (DEZn) as the p-dopant source. Proposed zinc-associated InP point defects and experimental DEZn doping data were used to formulate a point-defect equilibrium model of the Zn doping process of MOCVD InP. The model equation is contrasted with the...

We report the measurement of the optical constants of Si, GaP, InP, GaAs, GaAsP, and Ir at a wavelength of 46.9 nm (26.5 eV). The optical constants were obtained from the measurement of the variation of the reflectivity as a function of angle utilizing, as an illumination source, a discharge pumped 46.9nm table-top laser operated at a repetition rate of 1 Hz. These measurements constitute the f...

III-V materials, such as InGaAs and InP, are highly attractive for high-performance electronics optoelectronics owning to their high carrier mobilities potential bandgap engineering. Integration on silicon substrates, however, is a key requirement enable widespread adoption of these materials. In this work, direct wafer bonding (DWB) materials explored low-temperature enabling technology Si int...

Radiative corrections to QCD amplitudes in the quasi-multi-Regge kinematics are interesting in particular since the Reggeized form of these amplitudes is used in the derivation of the NLO BFKL. This form is a hypothesis which must be at least carefully checked, if not proved. We calculate the radiative corrections in the one-loop approximation using the s-channel unitarity. Compatibility of the...

Most optoelectronic devices for long haul optical communications are based on the InP/InGaAsP family of materials. Thin film coolers based on the same material system can be monolithically integrated with optoelectronic devices such as lasers, switches, and photodetectors to control precisely the device characteristics such as wavelength and optical power. Superlattice structures of InGaAs/InP ...

Single photon detectors sensitive to near-infrared (NIR) wavelength light are used in an increasing number of applications, such as quantum key distribution, laser detection and ranging, and integrated circuit analysis. There are many types of NIR single photon detectors, e.g. photomultiplier tube, superconducting single photon detector and single photon avalanche diode (SPAD). However, the SPA...

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In this paper, The x Al 1-x As graded buffer was inserted between the InAlAs layer and pseudomorphic 0.66 Ga 0.34 channel to improve material quality in channel. results show that with 50 nm thickness can obtain a good heterojunction interface root mean square (RMS) of 0.154 nm. two dimensional electron gas (2-deg) mobility concentration were 8570 cm 2 /Vs. 2.7 −2 × 10 12 at 300K, respectively....