Simulation results of InAlAs/InGaAs High Electron Mobility Transistors based on both GaAs and InP substrates are presented using the two-dimensional device simulator MINIMOS-NT. Three different HEMT technologies are evaluated by simulation and a single set of physical parameters is verified. The critical interaction of selfheating, impact ionization, SiN surface effects, and material compositio...

We report variation of collector and base currents with temperature from 80K-400K on InGaAs/GaAs and AlGaAs/GaAs HBTs. The results obtained showed clearly that, among all the material systems studied, the InP/ In0.53Ga0.47As HBTs have the lowest turn-on voltage (0.1V). This is in good agreement with the theoretical prediction. Although marked differences in the values of turn-on, Vturn-on for I...

This paper describes integration of an advanced composite high-K gate stack (4nm TaSiOx-2nm InP) in the In0.7Ga0.3As quantum-well field effect transistor (QWFET) on silicon substrate. The composite high-K gate stack enables both (i) thin electrical oxide thickness (tOXE) and low gate leakage (JG) and (ii) effective carrier confinement and high effective carrier velocity (Veff) in the QW channel...

WSi, thin films deposited on InP substrates have been investigated for possible use as refractory ohmic contact materials for self-aligned laser devices. The films have been rf diode sputtered using various Ar gas pressures from a single commercial target composed of W and Si with an atomic ratio of 1:l. Following the deposition, the WSiJInP samples were rapid thermal processed using a rapid th...

To fulfill the functionality demands from the fast developing optical networks, a hybrid integration approach allows for combining the advantages of various material platforms. We have established a polymer-based hybrid integration platform (polyboard), which provides flexible optical input/ouptut interfaces (I/Os) that allow robust coupling of indium phosphide (InP)-based active components, pa...

In this work, Monte Carlo simulation is performed for InP Gunn diode with a notch-d-doped structure. It found that the presence of d-doped layer has improved performance significantly as compared to conventional notch The effect caused an increment in fundamental operating frequency and current harmonic amplitude diodes by modifying electric field profile within device. An device length 800 nm ...

A. 13-tan wavelength, InGaAsP-InP folded-cavity, siirface-emitting laser with CH4-H2 reactive ion-etched vertical and 45° angled facets was demonstrated for the first time. Continnoos-wave threshold currents of 32 mA have been achieved, with >15 mW CW power for the surface-emitted light These surface-emitting lasers with two dry-etched facets are suitable for wafer-level -esüng and for monolith...

The authors report the self-organized growth of InAs/ InAlAs quantum wires on nominal 001 InP substrate and 001 InP substrates misoriented by 2°, 4°, and 8° towards both −110 and 110 . The influence of substrate misorientation on the structural and optical properties of these InAs/ InAlAs quantum wires is studied by transmission electron microscopy and photoluminescence measurements. Compared w...

We report reproducible fabrication of InP-InAsP nanowire light-emitting diodes in which electron-hole recombination is restricted to a quantum-dot-sized InAsP section. The nanowire geometry naturally self-aligns the quantum dot with the n-InP and p-InP ends of the wire, making these devices promising candidates for electrically driven quantum optics experiments. We have investigated the operati...

A unique wafer-scale self-organization process for generation of InP nanopillars is demonstrated, which is based on maskless ion-beam etching (IBE) of InP developed to obtain the nanopillars, where the height, shape, and orientation of the nanopillars can be varied by controlling the processing parameters. The fabricated InP nanopillars exhibit broadband suppression of the reflectance, 'black I...