We report the results of numerical investigations of the dynamical behavior of a blue-violet InGaN laser with a specially incorporated saturable absorber. We have identified the nature of the bifurcation that occurs in the device dynamics and also the conditions that are necessary for self-pulsating and excitable operations. We also demonstrate the influence of the relevant device parameters on...

Using subpicosecond optical pump-probe techniques, coherent zone-folded longitudinal acoustic phonons (ZFLAPs) were investigated in an InGaN multiple quantum well structure. A two-pump differential transmission technique was used to generate and control coherent ZFLAP oscillations through the relative timing and amplitude of the two pump pulses. Enhancement and suppression of ZFLAP oscillations...

Single-photon emitters with high degrees of purity are required for photonic-based quantum technologies. InGaN/GaN dots promising candidates the development single-photon but have typically exhibited emission insufficient purity. Here, pulsed is measured from an InGaN dot. A raw g(2)(0) value 0.043 ± 0.009 no corrections whatsoever achieved under quasi-resonant excitation. Such a low is, in pri...

Atomically-resolved mappings of the indium composition in InGaN/GaN multi-quantum well structures have been obtained by quantifying contrast HAADF-STEM. The quantification procedure presented here does not rely on computation-intensive simulations, but rather uses EDX measurements to calibrate HAADF-STEM contrast. histogram compositions from mapping provides unique insights into growth InGaN: t...

The effect of cooling conditions in the plasma-assisted molecular-beam epitaxy growth on structural and optical properties InGaN nanostructures is studied. It shown that samples without nitrogen plasma contributes to suppression phase separation nanostructures. integrated intensity photoluminescence from these increased by a factor 2. Keywords: InGaN, silicon, nanostructures, photoluminescence,...

A novel self‐powered InGaN/SiN x /Si uniband diode photodetector (PD) is introduced. The full band structure first constructed from the transition of direct tunneling to Fowler‐Nordheim holes through ultrathin SiN interlayer at forward bias in dark. Basis alignment n‐InGaN conduction with p‐Si valence zero bias. Under illumination, photocurrent, responsivity, and bandwidth for PD indicate two d...

Due to wavelength-selective characteristics, the InGaN-based photodetectors show bright prospects in visible light communication and fast imaging system. However, application of InGaN with simple structures is limited above field owing slow response speed. Herein, an ultrafast photodetector based on axial InN/InGaN nanorod array (NRA) heterojunction prepared through a self-catalytic high (930 °...

We demonstrate a small-area (0.1mm) semipolar (20 2 1) blue (447 nm) light-emitting diode (LED) with high light output power (LOP) and external quantum efficiency (EQE) by utilizing a single 12-nm-thick InGaN quantum well. The LED had pulsed LOPs of 140, 253, 361, and 460mW, and EQEs of 50.1, 45.3, 43.0, and 41.2%, at current densities of 100, 200, 300, and 400A/cm, respectively. The device sho...

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Ion-induced damage and intermixing was evaluated in InGaN/GaN multi-quantum wells (MQWs) using 35 keV N(+) implantation at room temperature. In situ ion channeling measurements show that damage builds up with a similar trend for In and Ga atoms, with a high threshold for amorphization. The extended defects induced during the implantation, basal and prismatic stacking faults, are uniformly distr...