نتایج جستجو برای: induced sub

تعداد نتایج: 1178254  

Journal: :Crystal Growth & Design 2022

A new series of heterometallic wheels, isolated as [Fe18M6(piv)12(Htea)18(tea)6(N3)6]·n(solvent) (MIII = Y (1a, 1b), Gd (2a, 2b), and Dy (3a, 3b); Hpiv pivalic acid, H3tea triethanolamine), forms by the reaction trinuclear μ3-oxo-linked or hexanuclear μ-OH-linked Fe(III) pivalate clusters with rare earth nitrates, H3tea, azide ligands in MeOH/MeCN EtOH/MeCN media under ultrasonic irradiation. S...

Journal: :Physical Chemistry Chemical Physics 2021

Solvent fluctuation (GTFE-TFE) of 2,2,2-trifluoroethanol (TFE)–H2O mixture was determined by small-angle X-ray scattering investigation. Protein’s coil–helix transition can be induced preferential binding TFE (ΔΓ23) without aggregation TFE.

Ali Akbar Moosavi Movahedi Gholam Hossein Hakimelahi Hassan Moghaddamnia

The thermal denaturation of adenosine deaminase (ADA) has been investigated in the presence of sodium n-dodecyl sulphate (SDS) over the temperature range of (293-363K) in 2.5 mM phosphate buffer, pH 6.4 by temperature scanning spectroscopy. The interaction of SDS caused the folding of adenosine deaminanse resulting in a decrease of TH (temperature of minimum solubility), TS<...

Journal: :Materials research express 2022

Abstract We report, an experimental evidence of surface states (SS) driven magneto-transport in a Bi 0.85 Sb 0.15 single crystal. Detailed high field (up to 12T) and low temperature (down 2 K) measurements are been carried out on the studied The phase, composition Raman modes through x-ray diffraction, Energy dispersive x-ray, spectroscopy. obtained crystal shows non-saturating magnetoresistanc...

Journal: :Dalton Transactions 2021

Solvent derived hydroxido bridge driven Ni6Ln2 [Ln = GdIII (1) and DyIII (2)] coordination aggregates of two different types has been synthesized. Magnetic susceptibility study confirms field induced slow relaxation magnetization for Ni6Dy2.

1987
Enrique Masgrau José B. Mariño José A. R. Fonollosa J. Salavedra-Moli

Journal: :Journal of the Japan Institute of Metals and Materials 1985

Journal: :Advanced electronic materials 2023

As an emerging nonvolatile memory technology, HfO2-based ferroelectrics exhibit excellent compatibility with silicon CMOS process flows; however, the reliability of polarization switching in these materials remains a major challenge. During repeated field programming and erase state initially pristine ferroelectric capacitors, magnitude measured increases, phenomenon known as “wake-up”. In this...

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