10 The influence of structure, phase composition, system dispersity and particle morphology of Fe2O3and In2O3-based thin film layers on the electrical parameters of the corresponding gas sensors was studied in this paper. High selectivity and sensitivity of heterostructural -Fe2O3/In2O3 thin film sensors in the detection of alcohols has been here established. As it was found, the above mentione...

We present a systematic density-functional study of phase relations in three 4d-transition-metal sesquioxides: Y2O3, Rh2O3, and In2O3. Y2O3 and In2O3 undergo pressure-induced transitions to phases with larger cation coordination number (from 6 to 7) at low pressures. However, this does not occur in Rh2O3 at least up to *300 GPa. This cannot be explained by usual arguments based on ionic-radii r...

InN thin films have been grown epitaxially on GaN-buffered sapphire substrates by molecular-beam epitaxy at 500 °C. A high level of oxygen contamination in the growth chamber led to formation of In2O3 precipitates in the films. These precipitates were characterized in detail by transmission electron microscopy TEM . The concentration of In2O3 was estimated to be less than 0.07 vol % in the pres...

Equilibrium phase relationships in the ZnO–In2O3 system were determined between 1100° and 1400°C using solidstate reaction techniques and X-ray diffractometry. In addition to ZnO and In2O3, nine homologous compounds, ZnkIn2Ok+3 (where k = 3, 4, 5, 6, 7, 9, 11, 13, and 15), were observed. Electrical conductivity and diffuse reflectance of the k = 3, 4, 5, 7 and 11 members were measured before an...

(Sn, Fe)-codoped In2O3 epitaxial films were deposited on (111)-oriented Y-stabilized ZrO2 substrates by pulsed laser deposition with constant Fe concentration and different Sn concentrations. The influence of Sn concentration on the crystal structure and properties of Fe-doped In2O3 ferromagnetic semiconductor films has been investigated systematically. Experimental results indicate that Sn dop...

Positron annihilation spectroscopy, when combined with highquality supporting modeling of positron states and annihilation in matter, is a powerful tool for detailed defect identification of vacancy-type defects in semiconductors and oxides. Here we demonstrate that the Doppler broadening of the positron annihilation radiation is a very sensitive means for observing the oxygen environment aroun...

The issue of how to improve the thermoelectric figure of merit (ZT) in oxide semiconductors has been challenging for more than 20 years. In this work, we report an effective path to substantial reduction in thermal conductivity and increment in carrier concentration, and thus a remarkable enhancement in the ZT value is achieved. The ZT value of In2O3 system was enhanced 4-fold by nanostructuing...

A series of In2O3 thin films, ranging from X-ray diffraction amorphous to highly crystalline, were grown on amorphous silica substrates using pulsed laser deposition by varying the film growth temperature. The amorphous-to-crystalline transition and the structure of amorphous In2O3 were investigated by grazing angle X-ray diffraction (GIXRD), Hall transport measurement, high resolution transmis...

We investigate the chemical and structural dynamics at interface of In2O3/m-ZrO2 their consequences on CO2 hydrogenation reaction (CO2HR) under conditions. While acting to enrich CO2, monoclinic zirconia (m-ZrO2) was also found serve as a modifier In2O3 that directly governs outcome CO2HR. These modifying effects include following: (1) Under conditions (above 623 K), partially reduced In2O3, i....

The local structure of a Zn, Sn codoped In2O3 thin film grown on ĉ-plane sapphire by pulsed-laser deposition was examined by polarization-dependent x-ray absorption spectroscopy. The bixbyite film structure is both out-of-plane and in-plane oriented, and the structural results show that both Zn and Sn dopants occupy In sites. The In–O bond length is comparable to that in powder In2O3. However, ...