The temperature-dependent direct current dc characteristics and radio frequency performance of an InGaP/GaAs heterojunction bipolar transistor with the composite passivations on base surface are studied and demonstrated. For comparison, the characteristics of other samples with different treatments on the base surfaces are also included in this work. The device with composite passivations, i.e....

The suitability of high-resolution X-ray diffraction (HRXRD) as an in-line measurement tool for the characterization of heterojunction bipolar transistor SiGe base layers and Si cap layers was investigated. We showed that despite of polycrystalline Si on the mask material of patterned wafers, HRXRD measurements performed on an array of small windows yield results which are comparable to those t...

This paper explains the development of physical model Heterojunction Bipolar Transistor (HBT) and characterizes its performance as an optoelectronic mixer (OEM). HBT has been identified as a suitable device to be implemented in optoelectronic mixers by simultaneously photodetecting an intensity modulated laser beam at 1550nm and frequency translating the detected signal to a higher or lower fre...

We have performed transport measurements on a gallium phosphide antimonide (GaPSb) film grown on GaAs. At low temperatures (T), transport is governed by three-dimensional Mott variable range hopping (VRH) due to strong localization. Therefore, electron-electron interactions are not significant in GaPSb. With increasing T, the coexistence of VRH conduction and the activated behavior with a gap o...

This letter describes the use of a power-optimized cascode configuration for obtaining maximum output power at millimeter-wave (mm-wave) frequencies for a two-way combined power amplifier (PA). The PA has been fabricated in a high-speed InP double heterojunction bipolar transistor technology and has a total active emitter area of 68.4 lm2. The experimental results demonstrate a small signal gai...

Large parasitic series resistances of heterojunction bipolar transistor (HBT) are shown to cause a sharp kink in the base current (IB) of the Gummel plot at elevated temperatures under high collector currents (IC) and low base-collector (b-c) applied bias (VBC). This effect was analyzed and attributed to the temperature dependence of low-field and high field mobilities of undepleted and deplete...

AlGaN/GaN npn heterojunction bipolar transistor structures were grown by low-pressure MOCVD. Secondary ion mass spectroscopy (SIMS) measurements were carried out to study the Mg memory effect and redistribution in the emitter–base junction. The results indicated that there is a Mg-rich film formed in the ongrowing layer after the Cp2Mg source is switched off. The Mg-rich film can be confined in...

This paper presents a six-bit current-steering digital-to-analogue converter (DAC), which optimises the spurious free dynamic range (SFDR) performance of high-speed binary weighted architectures by lowering current switch distortion and reducing the clock feedthrough effect. A novel current source cell is implemented that comprises heterojunction bipolar transistor current switches, negative-ch...

In this paper we present an analytical model to optimize the thermal and electrical layout for multilayer structure electronic devices through the solution to the non-linear 3-D heat equation. The thermal solution is achieved by the Kirchhoff transform and the 2-D Fourier transform. The model is general and can be easily applied to a large variety of integrated devices, provided that their stru...

The performance capabilities of Pnp InGaAsN-based heterojunction bipolar transistors (HBT) for use in complementary HBT technology have been theoretically addressed with a twodimensional simulation program based on the drift-diffusion model. Simulation results closely reproduce the DC characteristics experimentally observed from the first demonstrated Pnp AIGaAsAnGaAsN HBT with a current gain o...