The High Electron Mobility Transistor (HEMT) is a small geometry hetero-junction device that exploits the high electron mobility in an undoped region to achieve high speed operation. Hetero-junction is used to create a narrow undoped electron well which forms the channel for current flow. The electron mobility in the channel is found to be maximum due to the adequate presence of Indium quantity...

The interaction between intersubband resonances (ISRs) and metamaterial microcavities constitutes a strongly coupled system where new resonances form that depend on the coupling strength. Here we present experimental evidence of strong coupling between the cavity resonance of a terahertz metamaterial and the ISR in a high electron mobility transistor (HEMT) structure. The device is electrically...

In this paper, a scalable large signal GaN HEMT model including nonlinear thermal sub-circuit is described. Only two scalable parameters are needed in the Ids scalable model by introducing a simple correction factor. The established model can predict the I–V curves at different-in-size AlGaN/GaN HEMTs devices accurately. Small signal S-parameters and large signal load pull tests with on-wafer m...

Resonant Tunneling Diodes (RTD) and High Electron Mobility Transistor (HEMT) based on GaAs, as the piezoresistive sensing element, exhibit extremely high sensitivity in the MEMS sensors based on GaAs. To further expand their applications to the fields of MEMS sensors based on Si, we have studied the optimization of the GaAs epitaxy layers on Si wafers. Matching superlattice and strain superlatt...

In this work, two series of AlGaN/GaN/AlN high electron mobility transistor (HEMT) heterostructures have been grown by molecular beam epitaxy on AlN bulk substrates. The effects reduction in the GaN channel thickness as well AlGaN barrier and composition structural electrical properties studied. material analysis involved high-resolution x-ray diffraction, atomic force microscopy, cross-section...

Abstract High Electron Mobility Transistors (HEMT) made of aluminum gallium nitride/gallium nitride (AlGaN/GaN) have become a major focus for all electronic devices based on due to its excellent system characteristics. AlGaN/GaN HEMTs severe problems that degrade their performance and the drain current collapse (CC) is one them. During switching operations, CC increases on-resistance (R ON ) le...

Advanced circuits based on metamorphic HEMT (MHEMT) technologies on 4” GaAs substrates for both millimeter-wave, and mixedsignal applications are presented. Extrinsic cut-off frequencies of ft = 293 GHz and fmax = 337 GHz were achieved for a 70 nm gate length metamorphic HEMT technology. The MMIC process obtains high yield on transistor and circuit level. Single-stage low-noise amplifiers demon...