The fascinating properties of ionic liquids make it possible to synthesize semiconductor nanostructures via a simple and low-cost electrochemical pathway. The present paper summarizes our recent work on the synthesis of Si, Ge, and SixGe1–x nanostructures from ionic liquids: thin films, nanowires and photonic crystals. We also introduce our first results on the template-assisted electrodepositi...

Germanium telluride (GeTe) is both polar and metallic, an unusual combination of properties in any material system. The large concentration of free-carriers in GeTe precludes the coupling of external electric field with internal polarization, rendering it ineffective for conventional ferroelectric applications and polarization switching. Here we investigate alternate ways of coupling the polar ...

Although the vapor-liquid-solid growth of semiconductor nanowire is a non-equilibrium process, the equilibrium phase diagram of binary alloy provides important guidance on the growth conditions, such as the temperature and the equilibrium composition of the alloy. Given the small dimensions of the alloy seeds and the nanowires, the known phase diagram of bulk binary alloy cannot be expected to ...

To explore spintronics applications for Ge nanowire heterostructures formed by thermal annealing, it is critical to develop a ferromagnetic germanide with high Curie temperature and take advantage of the high-quality interface between Ge and the formed ferromagnetic germanide. In this work, we report, for the first time, the formation and characterization of Mn(5)Ge(3)/Ge/Mn(5)Ge(3) nanowire tr...

The Au-diffusion bottleneck Shadi A. Dayeh, Nathan H. Mack, Jian Yu Huang, and S. T. Picraux Center for Integrated Nanotechnologies, Los Alamos National Laboratory, MS K771 Los Alamos, New Mexico 87544, USA Physical Chemistry and Applied Spectroscopy, Los Alamos National Laboratory, MS J569 Los Alamos, New Mexico 87544, USA Center for Integrated Nanotechnologies, Sandia National Laboratories, M...

Device integration on flexible or low-cost substrates has driven interest in the low-temperature growth of semiconductor nanostructures. Using in situ electron microscopy, we examine the Au-catalyzed growth of crystalline Ge at temperatures as low as 150 °C. For this materials system, the model for low temperature growth of nanowires, we find three distinct reaction pathways. The lowest tempera...

We report studies defining the diameter-dependent location of electrically active dopants in silicon (Si) and germanium (Ge) nanowires (NWs) prepared by nanocluster catalyzed vapor-liquid-solid (VLS) growth without measurable competing homogeneous decomposition and surface overcoating. The location of active dopants was assessed from electrical transport measurements before and after removal of...

We report the synthesis of single-crystalline GeTe nanowires (NWs) and nanohelices (NHs) using a vapor transport method assisted by metal catalysts. The NWs have typical diameters of 65 +/- 20 nm and lengths reaching up to 50 mum, while NHs have an average helix diameter of 135 +/- 30 nm, with widely varying pitches. Electron microscopy and diffraction measurements show that these NWs and NHs a...

Semiconductor nanowires composed of III-V materials have enormous potential to add new functionality to electronics and optical applications. However, integration of these promising structures into applications is severely limited by the current near-universal reliance on gold nanoparticles as seeds for nanowire fabrication. Although highly controlled fabrication is achieved, this metal is enti...

The possibility of using a nanoporous Ge layer formed by implantation with 115 In + ions on monocrystal c-Ge substrate as an antireflection optical coating (In:PGe) was studied. For this purpose, ion wafers performed at energy E=30 keV, current density in the beam J=5 μA/cm 2 , and dose D=1.8· 10 16 ion/cm . It shown that fabricated In:PGe spongy layer, which consists intertwining nanowires, is...