This paper presents a new, simple method of measuring the generation lifetime in SOI (silicon-on-insulator) MOSFETS. Lifetime is extracted from the transient characteristics of MOSFET subthreshold current. Using this technique, generation lifetime was mapped across ®nished SIMOX (separation by implantated oxygen) wafers, BESOI (bonded and etchedback SOI) wafers, and UNIBOND wafers. BESOI materi...