The low frequency (1/f) noise characteristics of Schottky-gated strained-Si n-channel modulation doped field effect transistors have been investigated as a function of Ge concentration for different virtual substrates. The gate voltage dependence of the 1/f noise agrees well with the McWhorter carrier number fluctuations model. The trap density (extracted using a Ge dependent potential barrier ...

Germanium/carbon core–sheath nanostructures and junctions are produced when Ge nanowires are subject to a thermal treatment in an organic vapor doped vacuum. The organic molecules pyrolyze on the surface of the Ge nanowires and form a continuous graphitic coating. The carbon-sheathed Ge nanowires undergo melting and evaporation at high temperature, which results in the formation of germanium/ca...

The luminescence properties of highly strained, Sb-doped Ge/Si multi-layer heterostructures with incorporated Ge quantum dots (QDs) are studied. Calculations of the electronic band structure and luminescence measurements prove the existence of an electron miniband within the columns of the QDs. Miniband formation results in a conversion of the indirect to a quasi-direct excitons takes place. Th...

Transparent Er3+-doped germanotellurite glass ceramics (GCs) with variable Te/Ge ratio were prepared by controllable heat-treated process. X-ray diffraction (XRD) and transmission electron microscope (TEM) confirmed the formation of nanocrystals in glass matrix. Raman spectra were used to investigate the evolution of glass structure and photon energy. Fourier transform infrared (FTIR) spectra w...

We have used positron annihilation spectroscopy to study vacancy-type defects in strained phosphorus doped Si12xGex layers grown on Si substrates and irradiated with 2-MeV protons. The results show that the dominant defect in the SiGe layer after irradiation is the E center, the vacancy-phosphorus pair. When the sample is annealed at 150–175 °C, the dominant defect species in the SiGe layer cha...

The implementation of graphene in semiconducting technology requires precise knowledge about the graphene-semiconductor interface. In our work the structure and electronic properties of the graphene/n-Ge(110) interface are investigated on the local (nm) and macro (from μm to mm) scales via a combination of different microscopic and spectroscopic surface science techniques accompanied by density...

The photoelectric effect in a Ge-on-Si single-photon avalanche detector (SPAD) at an ultralow energy incident pulsed laser radiation is considered the frame of classical theory electrodynamics continuous media. It shown that which shared among huge number electrons Ge matrix can concentrate on only one these through constructive interference fields re-emitted by surrounding electrons. Conservat...

We demonstrate CVD in situ doping of Ge by utilizing phosphorus delta-doping for the creation of a high dopant diffusion source. Multiple monolayer delta doping creates source phosphorous concentrations above 1 × 10cm, and uniform activated dopant concentrations above 4 × 10cm in a 600-800nm thick Ge layer after in-diffusion. By controlling dopant out-diffusion, near-complete incorporation of p...