Scaling of single-gate MOSFET faces great challenges in the nanometer regime due to the severe shortchannel effects that cause an exponential increase in the sub-threshold and gate-oxide leakage currents. Double-gate FinFET technology mitigates these limitations by the excellent control over a thin silicon body by two electrically coupled gates. In this paper a variable threshold voltage keeper...

A multi-gate n-type In₀.₅₃Ga₀.₄₇As MOSFET is fabricated using gate-first self-aligned method and air-bridge technology. The devices with different gate lengths were fabricated with the Al2O3 oxide layer with the thickness of 8 nm. In this letter, impact of gate length variation on device parameter such as threshold voltage, high and low voltage transconductance, subthreshold swing and off curre...

Page I. Gate Drive Requirements ................................................................................1 I. A Impact of the impedance of the gate drive circuit on switching losses............1 I. B Impact of the gate drive impedance on noise sensitivity.................................2 I. C Impact of gate drive impedance on "dynamic latching" ..................................2 I. D U...

Gap junction channels span the membranes of two adjacent cells and allow the gated transit of molecules as large as second messengers from cell to cell. In vertebrates, gap junctions are composed of proteins from the connexin (cx) gene family. Gap junction channels formed by most connexins are affected by transjunctional voltage. The function of the voltage gate is unclear, because substantial ...

This paper reports on an extensive investigation of the gate stability of GaN-based High Electron Mobility Transistors with p-type gate submitted to forward gate stress. Based on combined electrical and electroluminescence measurements, we demonstrate the following results: (i) the catastrophic breakdown voltage of the gate diode is higher than 11 V at room temperature; (ii) in a step-stress ex...

We have investigated the RF power degradation of GaN high electron mobility transistors (HEMTs) with different gate placement in the source–drain gap. We found that devices with a centered gate show different degradation behavior from those with the gate placed closer to the source. In particular, centered gate devices degraded through a mechanism that has a similar signature as that responsibl...

For the characterization of n-channel 4H-SiC MOSFETs, current-voltage and Hall-effect measurements were carried out at room temperature. To interpret the Hall-effect measurements, the Hall factor for the electron transport in the channel of SiC MOSFETs was evaluated, for the first time. The method of the Hall factor calculation is based on the interdependence with mobility components via the re...

A new Schmitt trigger circuit, which consists of low-voltage devices, can receive the high-voltage signal without gate-oxide reliability problem, is proposed. The new proposed circuit, which can operate in a 3.3 V signal environment without suffering high-voltage gate-oxide stress, has been fabricated in a 0.13 μm 1/2.5 V CMOS process. The experimental results show that the measured transition ...

A three-dimensional simulation methodology allowing statistical study of the direct tunnelling gate current fluctuations in realistic nano-scale metal–oxide–semiconductor field effect transistors (MOSFETs) is presented. The approach has been applied to study the gate leakage fluctuations due to the combined effect of oxide thickness variation (OTV) and discrete random dopants (RD) in an example...

In this paper, low threshold voltage (Vt) “natural” transistors, available in some n+/p+ dual poly gate CMOS/ BiCMOS processes [1], are proposed for low voltage switched capacitor circuit design. The impact of the subthreshold off-current of these low devices on the performance of analog switched-capacitor (SC) circuits is analyzed. Methods for reducing the subthreshold offcurrent in analog swi...