We demonstrate atomic-layer-deposited (ALD) high-k dielectric integration on 2-D layer-structured molybdenum disulfide (MoS2) crystals and MoS2 dual-gate n-channel MOSFETs with ALD Al2O3 as the gate dielectric. Our C–V study of MOSFET structures shows good interface between 2-D MoS2 crystal and ALD Al2O3. Maximum drain currents using back gates and top gates are measured to be 7.07 and 6.42 mA/...

Recently, very promising properties of epitaxially grown, crystalline rare-earth metal-oxides have been reported [1] and the integration of Pr2O3 dielectric in a conventional polysilicon CMOS process was successfully demonstrated [2]. However, high temperature annealing [3] and aggressive reactive ion etching (RIE) was found to degrade the initial quality of the sensitive high-K gate stack [2]....

Recovery transients following blocking-state voltage stress are analyzed for two types of AlGaN/GaN HEMTs, one set of devices with thick AlGaN barrier layers and another with recessed-gate geometry and ALD SiO2 gate dielectric. Results show temperature-invariant emission processes are present in both devices. Recessedgate devices with SiO2 dielectrics are observed to exhibit simultaneous trappi...

We propose a computationally efficient, accurate and numerically stable quantum-mechanical technique to calculate the direct tunneling ~DT! gate current in metal-oxide-semiconductor ~MOS! structures. Knowledge of the imaginary part G of the complex eigenenergy of the quasi-bound inversion layer states is required to estimate the lifetimes of these states. Exploiting the numerically obtained exp...

We demonstrate III–V compound semiconductor (GaAs, InGaAs, and GaN) based metal-oxide-semiconductor field-effect transistors (MOSFETs) with excellent performance using an Al2O3 high-permittivity (high-k) gate dielectric, deposited by atomic layer deposition (ALD). These MOSFET devices exhibit extremely low gate-leakage current, high transconductance, high dielectric breakdown strength, a high s...

High performance deep-submicron inversion-mode InGaAs MOSFET with ALD Al2O3 as gate dielectric has been demonstrated. Transistors with gate lengths down to 150 nm have been fabricated and characterized. Record high extrinsic transconductance of 1.1 mS/μm has been achieved at Vds = 2.0 V with 5 nm Al2O3 as gate dielectric. Gm can be further improved to 1.3 mS/μm by reducing the gate oxide thickn...

The paper presents a simulation study of the electrical characteristic of Bulk Planar Junctionless Transistor (BPJLT) using spacer. The BPJLT is a transistor without any PN junctions in the vertical direction. It is a gate controlled variable resistor. The characteristics of BPJLT are analyzed by varying the oxide material under the gate. It can be shown from the simulation that an ideal subthr...

A novel approach for the fabrication of transistors and circuits based on individual single-crystalline ZnO nanowires synthesized by a low-temperature hydrothermal method is reported. The gate dielectric of these transistors is a self-assembled monolayer that has a thickness of 2 nm and efficiently isolates the ZnO nanowire from the top-gate electrodes. Inverters fabricated on a single ZnO nano...

The effects of gate dielectrics material in organic thin film transistors (OTFTs) were investigated. The gate dielectrics were deposited by plasma enhanced chemical vapor deposition (PECVD) with cyclohexane and tetraethylorthosilane (TEOS) respectively used as organic and inorganic precursors. The gate dielectrics (gate insulators) were deposited as either organic plasma-polymer or organic–inor...

Electrical properties, current transport mechanism, and stress induced leakage current (SILC) effect of Al2O3 gate dielectric thin films deposited by reactive dc magnetron sputtering were studied. The results show that annealing in O2 ambient can effectively reduce the oxygen vacancy in Al2O3 films but may not result in additional interfacial layer form at Al2O3/Si interface. In the fresh devic...