نتایج جستجو برای: gas mobility control

تعداد نتایج: 1637340  

2006
J. J. Quan

Metallic superlattices with planar, unalloyed (unmixed) interfacial structures are difficult to fabricate by all conventional vapor deposition methods. Molecular dynamics simulations have been used to explore the ways in which inert gas ions can be used to control the atomic assembly of a model Cu/Co metallic super lattice system. High energy, high atomic weight ions are shown to smooth rough i...

Journal: :International Journal for Ion Mobility Spectrometry 2011

Journal: :Advances in Chemical Engineering and Science 2021

The mobility profiles of gases used in enhanced oil recovery (EOR) have been thoroughly investigated through the coupling operations data mining oilfield and experimental analyses. Mobility as an EOR objective function has not previously applied to characterize potential reservoirs for selection application, even though it is a robust combinatorial that benefits from two petrophysical var...

2015
M. Horvat D. Kocman Jozef Stefan

The sediment of the Gulf of Trieste is heavily polluted by mercury (Hg) originating from Hg mining activities in the past. The construction of two gas terminals for LNG is planned in this heavily contaminated site. A simulation based on previously developed models and measurements indicated that due to the enhanced mobility and reactivity of Hg from the sediment, elevated mercury concentrations...

2009
Mikhail S. Veshchunov

Effect of porosity on grain growth is both the most frequent and technologically important situation encountered in ceramic materials. Generally this effect occurs during sintering, however, for nuclear fuels it also becomes very important under reactor irradiation conditions. In these cases pores and gas bubbles attached to the grain boundaries migrate along with the boundaries, in some circum...

2016
Kumhyo Byon Douglas Tham John E. Fischer Alan T. Johnson K. Byon J. E. Fischer A. T. Johnson

High performance ambipolar silicon nanowire (SiNW) transistors were fabricated. SiNWs with uniform oxide sheath thicknesses of 6–7 nm were synthesized via a gas-flow-controlled thermal evaporation method. Field effect transistors (FETs) were fabricated using as-grown SiNWs. A two step annealing process was used to control contacts between SiNW and metal source and drain in order to enhance devi...

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