Gallium nitride [GaN] nanorods grown on a Si(111) substrate at 720°C via plasma-assisted molecular beam epitaxy were studied by field-emission electron microscopy and cathodoluminescence [CL]. The surface topography and optical properties of the GaN nanorod cluster and single GaN nanorod were measured and discussed. The defect-related CL spectra of GaN nanorods and their dependence on temperatu...

We report on strong excitonic luminescence in wurtzite GaN at 3.309 and 3.365 eV ~T56 K!. These lines lie well below the band gap and are found commonly in layers grown by different techniques and on different substrates. From detailed photoluminescence investigations we find small thermal activation energies and a very weak electron–phonon coupling. The photoluminescence behavior under hydrost...

Structure A device’s cost effectiveness starts with leveraging existing production infrastructure. EPC’s process begins with silicon wafers. Utiilizing existing silicon processing equipment, a thin layer of Aluminum Nitride (AlN) is grown on the Silicon to isolate the device structure from the Substrate. The isolation layer for 200 V and below devices is 300 V. On top of this, a thick layer of ...

The large bandgap of gallium nitride (GaN) and aluminum gallium nitride (AlGaN) offers an inherently high intrinsic breakdown field. When the materials are joined into the AlGaN/GaN heterostructure a 2-dimensional electron gas (2DEG) with a high electron density as well as high electron mobility is generated. The combination of high electron density with high mobility and high breakdown field r...

The surface polarization of Ga-face gallium nitride (GaN) (2 nm)/AlGaN (22 nm)/GaN channel (150 nm)/buffer/Si with Al2O3 capping layer is investigated by angle-resolved X-ray photoelectron spectroscopy (ARXPS). It is found that the energy band varies from upward bending to downward bending in the interface region, which is believed to be corresponding to the polarization variation. An interfaci...

This paper reports on a novel technology for low-noise un-cooled detection of infrared (IR) radiation using a combination of piezoelectric, pyroelectric, electrostrictive, and resonant effects. The architecture consists of a parallel array of high-Q gallium nitride (GaN) micro-mechanical resonators coated with an IR absorbing nanocomposite. The nanocomposite absorber converts the IR energy into...

The groundbreaking discovery1 that graphite could be cleaved into its 2D building block, graphene, has led to similar efforts directed towards other layered 3D solids. In fact, a wide variety of 2D materials have been discovered over the past decade: phosphorene, transition metal dichalcogenides and MXenes (transition metal carbides, nitrides or carbonitrides) to name just a few2,3. Most such 2...

Ultralow wear nature of gallium nitride (GaN) has been revealed recently. The wear rate for GaN has a significant dependence on humidity, ranging from 9 10 9 mm3/Nm to 9.5 10 7 mm3/Nm; the mechanisms responsible for this variation in wear remain unclear. Here, we performed reciprocal sliding test on GaN under different environments and characterized the chemical compositions of corresponding wo...

Gallium nitride GaN nanowires are grown with controlled diameter and position by combining electron-beam lithography and naturally occurring surface tension forces. Lithographically defined particle diameters were held constant while only the film thickness was varied. Annealing drives as-deposited metal disks toward hemispheres according to conservation of volume constraints, resulting in well...