We report on a terahertz quasi-time domain spectroscopy (QTDS) system based low-cost continuous wave multimode diode laser. Commercially available low-temperature grown gallium arsenide (LT-GaAs) photoconductive antennas (PCAs) with spiral and dipole configurations were used as emitter detector, respectively. Terahertz pulses spaced at approximately 55 ps bandwidth of 400 GHz obtained. Parametr...

The integration of optomechanics and optoelectronics in a single device opens new possibilities for developing information technologies exploring fundamental phenomena. Gallium arsenide (GaAs) is well-known material that can bridge the gap between functionalities optomechanical devices optical gain media. Here, we experimentally demonstrate high-frequency GaAs resonator with ring-type bullseye ...

Tremendous increment in the high speed demands of data rate results in the continuous development in Type II InP/GaAsSb/InP Dual Heterojunction Bipolar Transistor Device. Physical based two dimensional device simulators, Atlas tool is used to study the DC operation and performance of InP/GaAsSb Dual Heterojunction Bipolar Transistor Device approaching Giga Hertz frequency range. Gallium Arsenid...

We report on the use of InGaAsP strain-compensated superlattices (SC-SLs) as a technique to reduce the defect density of Indium Phosphide (InP) grown on silicon (InP-on-Si) by Metal Organic Chemical Vapor Deposition (MOCVD). Initially, a 2 μm thick gallium arsenide (GaAs) layer was grown with very high uniformity on exact oriented (001) 300 mm Si wafers; which had been patterned in 90 nm V-groo...

An enhanced valence force field model for zinc-blende crystals is developed to provide a unified description of the isothermal static and dynamical lattice properties of gallium arsenide. The expression for the lattice energy includes a second-nearest-neighbor coplanar interaction term, the Coulomb interaction between partially charged ions, and anharmonicity corrections. General relations are ...

Possible isomers of the gallium arsenide clusters of the formula Ga,,As, containing up to ten atoms and icosahedral clusters are enumerated. The possible parent polyhedrons up to ten vertices are constructed and then Pdlya’s theorem is applied to each polyhedron to calculate the generating functions for the enumeration of the isomers of gallium arsenide clusters of the formula Ga,,,As,. The dis...

This study reports on the local exploration of magnetic field effects in semiconductors, including silicon (Si), germanium (Ge), gallium arsenide (GaAs), and indium phosphide (InP) using time differential perturbed angular correlation (TDPAC) technique. TDPAC measurements were carried out under external fields with strengths 0.48 T 2.1 at room temperature, 77 K following implantation 111In (111...

Photovoltaic cells are able to convert sunlight into electricity, providing enough of the most abundant and cleanest energy to cover our energy needs. However, the efficiency of current photovoltaics is significantly impeded by the transmission loss of sub-band-gap photons. Photon upconversion is a promising route to circumvent this problem by converting these transmitted sub-band-gap photons i...

Integrating III–V gain elements in the silicon photonics platform via selective area heteroepitaxy (SAH) would enable large-scale and low-cost photonic integrated circuits. Here, we demonstrate antiphase boundary (APB)-free gallium arsenide (GaAs) microridges selectively grown on flat-bottom (001) (Si) inside a recess. This approach eliminates need for etching patterned Si to form trapezoid or ...