نتایج جستجو برای: gallium arsenide
تعداد نتایج: 16417 فیلتر نتایج به سال:
Artificial crystal lattices can be used to tune repulsive Coulomb interactions between electrons. We trapped electrons, confined as a two-dimensional gas in a gallium arsenide quantum well, in a nanofabricated lattice with honeycomb geometry. We probed the excitation spectrum in a magnetic field, identifying collective modes that emerged from the Coulomb interaction in the artificial lattice, a...
Computer simulation of high-speed Gallium Arsenide Charge Coupled Devices is performed using an established twodimensional semiconductor device simulation program. The effect of active layer thickness on the Charge Transfer Efficiency (CTE) and the dynamic range is investigated using different active layers. Also, different gate architectures are compared for optimum dynamic range and compatibi...
Wide bandgap semiconductors have expanded the scope of device applications beyond those of silicon and gallium arsenide. Exploitation of wide bandgap semiconductors holds promise for revolutionary improvements in the cost, size, weight and performance of a broad range of military and commercial microelectronic and opto-electronic systems. The inherent material properties of silicon carbide, gal...
Chemical costs can be a significant part of semiconductor manufacturing materials cost. True chemical cost consists of raw chemical price, handling expenses and disposal of used chemicals. Some of this usage can be cut back by recycling the chemicals for re-use. This paper describes the work done to establish the use of recycled chemical for etch processing during Gallium Arsenide Hetero-juncti...
Tunnel diodes utilizing deep-levels in low-temperature-grown (LTG) gallium-arsenide (GaAs) are demonstrated. These tunnel diodes achieve peak-to-valley current ratios as high as 22, a record negative-conductance-per-area of 1/226 Xlm, and a record peak current density of 16 kA/cm, all at room-temperature. 2004 Elsevier Ltd. All rights reserved. PACS: 72.20.H; 73.50.F; 85.30.M; 71.55.E; 73.61.E;...
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