Relativistic band theoretical calculations reveal that intrinsic spin Hall conductivity in hole-doped archetypical semiconductors Ge, GaAs, and AlAs is large [approximately 100(planck/e)(Omega cm)(-1)], showing the possibility of a spin Hall effect beyond the four-band Luttinger Hamiltonian. The calculated orbital-angular-momentum (orbital) Hall conductivity is one order of magnitude smaller, i...

We study the electronic structure of a new type of Fibonacci superlattice based on Si δ-doped GaAs. Assuming that δ-doped layers are equally spaced, quasiperiodicity is introduced by selecting two different donor concentrations and arranging them according to the Fibonacci series along the growth direction. The one-electron potential due to δ-doping is obtained by means of the Thomas-Fermi appr...

We report a modulation-doped multiquantum well structure which suppresses the usual ambient light effect associated with modulation doping. Ten GaAs quantum wells 300-h; wide are symmetrically modulation doped using Si S doping at the center of 3600:A-wide Ab.,G%,As barriers. The low field mobility of each well is 4.0X lo6 cm/V s at a density of 6.4X 10” cme2 measured at 0.3 K either in the dar...

Manuscript received September 27, 1999. Manuscript revised October 20, 1999. † The authors are with NTT Cyber Space Laboratories, Musashino-shi, 180-8585 Japan. a) E-mail: [email protected] SUMMARY We studied Si and Mg doping characteristics in cubic GaN and fabricated a light emitting diode of cubic GaN on a GaAs substrate by metalorganic vapor-phase epitaxy. The diode structure con...

Quantum dots, realized by self-organization during strained layer heteroepitaxy, have recently found applications in microelectronics and optoelectronics. Selforganized quantum dots in the In~Ga!As/Ga~Al!As system are approximately pyramidal in shape with a base length of about 20 nm and a height of 6–8 nm. Typical molecularbeam epitaxial growth leads to an ordered array of 10– 10 dots/cm. Howe...

Heteroepitaxial Zn-doped p-GaP was grown on (001) GaAs, Si and (111) substrates by hydride vapor phase epitaxy for solar-driven photoelectrochemical applications of hydrogen generation water splitting CO2 reduction. Growth GaP realized through the implementation a low-temperature buffer layer, morphology crystalline quality were enhanced optimizing precursor flows pre-heating ambient substrate....

As device dimensions decrease, the physics of nonequilibrium transport becomes increasingly important. However, the study of nonequilibrium transport has suffered from one serious disadvantage, namely that the distribution function of electrons has not been determined directly. We demonstrate a method for obtaining the distribution function using a planar doped barrier as a 'hot electron spectr...