In this work,copper/palladium (Cu/Pd) multilayer nanowires were successfully prepared by electrodeposition method using polycarbonate template. The fabrication of Pd/Cu multilayer nanowires was controlled by analyzing the current–time transient during electrodeposition using potentiostat. The morphological properties of the nanowires were studied by scanning electron microscopy (SEM) and resu...

Room-temperature (RT) epitaxial growth of ZnO thin films on flexible cyclo-olefin polymer (COP) substrates coated with the exfoliated β-Ga2O3(100) single crystal sheets as a seed layer was investigated using pulsed laser deposition technique. Scanning electron microscopy (SEM) observations and X-ray diffraction (XRD) measurements demonstrated that c-axis-oriented ZnO(0001) were obtained at RT b...

Tunneling junctions having the structure Ag−S(CH2)n−1CH3// Ga2O3/EGaIn allow physical−organic studies of charge transport across selfassembled monolayers (SAMs). In ambient conditions, the surface of the liquid metal electrode (EGaIn, 75.5 wt % Ga, 24.5 wt % In, mp 15.7 °C) oxidizes and adsorbs―like other high-energy surfaces―adventitious contaminants. The interface between the EGaIn and the SA...

CoFe/Cu multilayer nanowires were electrodeposited into anodic aluminum oxide templates prepared by a two-step mild anodization method, using the single-bath technique. Nanowires with 30 nm diameter and the definite lengths were obtained. The effect of CoFe layers thickness and annealing on the magnetic behavior of the multilayer nanowires was investigated. The layers thickness was controlled t...

The intrinsic n-type conduction in Gallium oxides (Ga2O3) seriously hinders its potential optoelectronic applications. Pursuing p-type conductivity is of longstanding research interest for Ga2O3, where the Cu- and Zn-dopants serve as promising candidates monoclinic β-Ga2O3. However, theoretical band structure calculations Zn-doped allotrope α-Ga2O3 phase are rare, which focus present study base...

The aim of this research is preparation of SnO2 nanowires by means of Thermal chemical reaction vapor transport deposition (TCRVTD) method from SnO powders. The morphology, chemical composition and microstructure properties of the nanowires are characterized using field emission scanning electron microscope (FE-SEM), EDS, and XRD. The XRD diffraction patterns reveal that the SnO2 nanowires have...

The construction of p-NiO/n-Ga2O3 heterojunction becomes a popular alternative to overcome the technological bottleneck p-type Ga2O3 for developing bipolar power devices practical applications, whereas identification performance-limiting traps and transport dynamics are still not exploited yet. To this end, fundamental correlation carrier transport, trapping recombination kinetics in NiO/β-Ga2O...

Ultra-wide bandgap semiconductor gallium oxide (Ga2O3) features a breakdown strength of 8 MV/cm and bulk mobility up to 300 cm2V−1s−1, which is considered promising candidate for next-generation power devices. However, its low thermal conductivity reckoned be severe issue in the management high-power The epitaxial integration thin films on silicon carbide (SiC) substrates possible solution tack...

sn02 nanowires with diameters of 30 — 200 nm have been synthesized by using carbothermalprocess via a thick film of tin dioxide and carbon powder precursor. the nanowires werecharacterized by x-ray power diffraction (xrd), scanning electron microscopy (sem),transmission electron microscopy (tem) and selected area electron diffraction (saed).the gas sensing characteristic of nanowires toward eth...