The effect of different aspect ratios (length to diameter ratio, L:D) on single polypyrrole (Ppy) nanowire based field effect transistor (FET) sensors for real time pH monitoring was studied. Ppy nanowires with diameters of ∼60, ∼80, and ∼200 nm were synthesized by using electrochemical deposition inside anodized aluminum oxide (AAO) template and were assembled using AC dielectrophoretic alignm...

An alternative-grating gated AlGaN/GaN field-effect transistor (FET) is proposed by considering the slit regions to be covered by a highly doped semiconductor acting as supplemental gates. The plasmonic resonant absorption spectra are studied at THz frequencies using the FDTD method. The simulated results show that the 2DEGs, under supplemental gates, modulated by a positive voltage, can make t...

We report the properties of a field effect transistor (FET) and a gas sensor based on CuO nanowires. CuO nanowire FETs exhibit p-type behavior. Large-scale p-type CuO nanowire thin-film transistors (10(4) devices in a 25 mm(2) area) are fabricated and we effectively demonstrate their enhanced performance. Furthermore, CuO nanowire exhibits high and fast response to CO gas at 200 degrees C, whic...

The ambipolar random telegraph signal (RTS) (i.e., RTS in both hole conduction at negative gate biases and electron conduction at positive gate biases) is observed in an ambipolar carbon nanotube field-effect transistor (CNT-FET). Then, the ambipolar RTS is used to extract the small band gap of the SWNT. The determination of the small band gap CNT using RTS demonstrates a potentially high accur...

We demonstrate charge detection with single-electron resolution at high readout frequency using a silicon field-effect transistor (FET) integrated double resonant circuits. A FET, whose channel of 10-nm width enables single electron to be detected room temperature, is connected circuits composed coupled inductors and capacitors, these provide two resonance frequencies. When the FET driven by ca...

Abstract Reliability and controllability for a new scheme of gate-all-around field effect transistor (GAA-FET) with silicon channel utilizing sectorial cross section is evaluated in terms Ion/Ioff current ratio, transconductance, subthreshold slope, threshold voltage roll-off, drain induced barrier lowering (DIBL). In addition, the scaling behavior electronic figures merit comprehensively studi...

A Field-Effect Transistor (FET) is presented that combines the conventional lay-out of the silicon substrate (channel and source and drain connections) with a Si-C linked organic gate insulator contacted via an organic, conducting polymer. It is shown that this hybrid device combines the excellent electrical behavior of the silicon substrate and the ease of use and good properties of organic in...

A silicon carbide based field effect transistor (SiC-FET) structure was used for methanol sensing. Due to the chemical stability and wide band gap of SiC, these sensors are suitable for applications over a wide temperature range. Two different catalytic metals, Pt and Ir, were tested as gate contacts for detection of methanol. The sensing properties of both Ir gate and Pt gate SiC-FET sensors w...

We demonstrate a strategy for designing high-performance, ambipolar, acene-based field-effect transistor (FET) materials, which is based on the replacement of C-H moieties by nitrogen atoms in oligoacenes. By using this strategy, two organic semiconductors, 6,13-bis(triisopropylsilylethynyl)anthradipyridine (1) and 8,9,10,11-tetrafluoro-6,13-bis(triisopropylsilylethynyl)-1-azapentacene (3), wer...