نتایج جستجو برای: fe dopant
تعداد نتایج: 82969 فیلتر نتایج به سال:
To achieve and use the most exotic electronic phenomena predicted for the surface states of 3D topological insulators (TIs), it is necessary to open a "Dirac-mass gap" in their spectrum by breaking time-reversal symmetry. Use of magnetic dopant atoms to generate a ferromagnetic state is the most widely applied approach. However, it is unknown how the spatial arrangements of the magnetic dopant ...
Low field ion mobility spectrometry-mass spectrometry (IMS-MS) techniques exhibit low orthogonality, as inverse mobility often scales with mass to charge ratio. This inadequacy can be mitigated by adding vapor dopants, which may cluster with analyte ions and shift their mobilities by amounts independent of both mass and mobility of the ion. It is therefore important to understand the interactio...
We provide a systematic and theoretical study of the electronic properties of a large number of impurities, vacancies, and adatoms in monolayer MoS2, including groups III and IV dopants, as well as magnetic transition metal atoms such as Mn, Fe, Co, V, Nb, and Ta. By using density functional theory over a 5 × 5 atomic cell, we identify the most promising element candidates for p-doping of MoS2....
Linear and nonlinear refractive index, Abbe number, electronic energy gap and oscillator strength are reported for a new series of (Mg, Ba)F2-based fluorophosphates glasses (MBBA system) doped with rare earth dopants (Er , Nd) in the concentration range of 6.67x10 2.86x10 (ions/cm) and 2.5x10 1.25x10 (ions/cm), respectively. The linear refractive index is found to increase with increasing dopan...
One consequence of the continued downward scaling of transistors is the reliance on only a few discrete atoms to dope the channel, and random fluctuations in the number of these dopants are already a major issue in the microelectronics industry. Although single dopant signatures have been observed at low temperatures, the impact on transistor performance of a single dopant atom at room temperat...
Grain boundary mobility of CeO, containing 0.1% and 1.0% trivalent dopant cations (Sc, Yb, Y, Gd, and La, in order of increasing ionic radius) has been measured. At the lower dopant concentration (intrinsic regime), mobility is controlled by grain boundary diffusion of host cations, whereas at the higher dopant concentration (extrinsic regime), mobility is controlled by solute drag through the ...
We identified p-type nanoscale dopant-induced dots that are formed by fluctuations of the dopant atom distribution in sufficiently thin GaAs p – n multilayers. Their electronic structure and the resulting potential variations were investigated by cross-sectional scanning tunneling microscopy and spectroscopy as a function of the number of dopant atoms within the dot. We find significant changes...
In optics, when polychromatic light is filtered by an optical filter, the monochromaticity of the light can be improved. In this work, we reported that Ag dopant atoms could be used as an optical filter for nanosized Mn:ZnSe quantum dots (QDs). If no Ag doping, aqueous Mn:ZnSe QDs have low monochromaticity due to coexisting of strong ZnSe band gap emission, ZnSe trap emission, and Mn dopant emi...
A nonmetal doping strategy was exploited for the conventional La0.5Sr0.5FeO3-δ (LSF) cathode, allowing high performance proton-conducting solid oxide fuel cells (H-SOFCs). Unlike previous studies focusing on utilization of metal oxides as dopants, phosphorus, which is a element, used cation dopant LSF by partially replacing Fe ions to form new La0.5Sr0.5Fe0.9P0.1O3-δ (LSFP) compound. The H-SOFC...
This paper presents a summary of some of the important properties of iron in silicon for solar cells. The importance of the chemical state of the Fe, and its impact on recombination activity in both pand n-type silicon, are discussed. Methods for the sensitive detection of dissolved Fe are also reviewed, including recent developments in high spatial resolution Fe imaging based on photoluminesce...
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