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Electro-absorption from GeSi heterostructures is receiving growing attention as a high performance optical modulator for short distance optical interconnects. Ge incorporation with Si allows strong modulation mechanism using the Franz-Keldysh effect and the quantum-confined Stark effect from bulk and quantum well structures at telecommunication wavelengths. In this review, we discuss the curren...
X-ray standing waves have been employed to study the microscopic mechanism of surfactant mediated epitaxy of Ge on Si~111!. After deposition of 0.5 BL Ge on the Ga:Si~111!-6.336.3 surface we find Ga floating on the surface in a Ga-Ge bilayer with Ga in a substitutional adsorption site. Deposition of 0.5 BL Ge on the Ga:Si~111!-A33A3 surface leads to a change of the Ga adsorption site from T4 to...
Abstract Let ${\mathbb{P}}(ord\pi = ord\pi ')$ be the probability that two independent, uniformly random permutations of [ n ] have same order. Answering a question Thibault Godin, we prove ') {n^{ - 2 + o(1)}}$ and \ge {1 \over 2}{n^{ 2}}lg*n$ for infinitely many . (Here lg * is height tallest tower twos less than or equal to .)
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