Deep-level transient spectroscopy has been used to characterize electronic defects in n-type GaN grown by reactive molecular-beam epitaxy. Five deep-level electronic defects were observed, with activation energies E150.23460.006, E250.57860.006, E350.65760.031, E450.96160.026, and E550.24060.012 eV. Among these, the levels labeled E1 , E2 , and E3 are interpreted as corresponding to deep levels...

We systematically study the growth kinetics and the critical surface dynamics of cell monolayers by a class of computationally efficient cellular automaton models avoiding lattice artifacts. Our numerically derived front velocity relationship indicates the limitations of the Fisher-Kolmogorov-Petrovskii-Piskounov equation for tumor growth simulations. The critical surface dynamics corresponds t...

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We have characterized the ~234! and ~432! reconstructions of GaAs and InAs ~001! that are present in a metalorganic vapor-phase epitaxy ~MOVPE! reactor. Scanning tunneling micrographs show that these surfaces are terminated with arsenic and gallium ~or indium! dimers. The ~234! dimer row exhibits a mottled appearance, which is ascribed to the adsorption of alkyl groups on some of the sites. On ...

We present LEDs and asymmetric waveguide structures with embedded nanostripes and semipolar {101̄1} quantum wells. All samples are based on c-plane GaN/AlGaN templates grown heteroepitaxially on c-plane sapphire substrates by metal organic vapour phase epitaxy. The nanostripes have a periodicity of 250 nm and were achieved by selective area epitaxy with dielectric growth masks structured on full...

The evolution of InAs quantum dot (QD) formation is studied on GaAs ring-like nanostructures fabricated by droplet homo-epitaxy. This growth mode, exclusively performed by a hybrid approach of droplet homo-epitaxy and Stransky-Krastanor (S-K) based QD self-assembly, enables one to form new QD morphologies that may find use in optoelectronic applications. Increased deposition of InAs on the GaAs...

We study, using noise-reduction techniques, layer-by-layer epitaxial growth in limited mobility solid-on-solid nonequilibrium surface growth models, which have been introduced in the context of kinetic surface roughening in ideal molecular beam epitaxy. Multiple hit noise reduction and long surface diffusion length lead to qualitatively similar layer-by-layer epitaxy in (1+1)- and (2+1)-dimensi...

We introduce an innovative approach to the simultaneous control of growth mode and magnetotransport properties of manganite thin films, based on an easy-to-implement film/substrate interface engineering. The deposition of a manganite seed layer and the optimization of the substrate temperature allows a persistent bi-dimensional epitaxy and robust ferromagnetic properties at the same time. Struc...

We report the development of Al0.7Ga0.3N /AlN quantum wells with high internal quantum efficiency. All samples had identical well and barrier thickness but the III/V flux ratio was varied during growth by increasing the Ga flux. The luminescence spectra show single peaks which vary from 220 nm III /V 1 to 250 nm III /V 1 with internal quantum efficiency varying from 5% to 50%, respectively. To ...