In this paper, the breakdown characteristic of 4H-SiC pn diode using Internal Ring(IR) termination technique is investigated. N-type 4H-SiC wafer having a 10um epilayer with a doping concentration of 5.4×10 15 /cm 3 was used to fabricate the pn diodes with one or two IRs. IR was formed by boron implantation of single energy of 360keV with 5×10 14 /cm 2 dose and activation annealing at 1700 o C ...

Observing single electron pulses provides insight into the mechanism that leads to sudden high current jumps (breakdown) in aged wire chambers. This single electron activity is found to be consistent with the Fowler-Nordheim equation for field emission of electrons from a cathode surface in a high electric field. The high electric field arises from the positive ion buildup on a very thin insula...

Kerr electro-optic technique has been used to measure the electric field distribution in high voltage stressed dielectric liquids, where the difference between refractive indices for light polarized parallel and perpendicular to the local electric field is a function of the electric field intensity. For transformer oil, the most widely-used insulating liquids in power apparatus and high voltage...

Electroforming of an Al/Al2O3/polymer/Al resistive switching diode is reported. Electroforming is a dielectric soft-breakdown mechanism leading to hysteretic current– voltage characteristics and non–volatile memory behavior. Electron trapping occurs at early stages of electroforming. Trapping is physically located at the oxide/polymer interface. The detrapping kinetics is faster under reverse b...

Abstract In this paper, a computer-based analysis of AC-coupled silicon microstrip detectors is presented. The study aims at investigating the main geometrical parameters responsible for potentially critical effects, such as early micro-discharges and breakdown phenomena. The adoption of CAD tools allows for evaluating the actual field distribution within the device, and makes it possible to id...

A finite element model was used to study the dielectric constant and breakdown strength of polymer composite filled with high aspect ratio fillers. The impact of composite microstructure and filler aspect ratio on the dielectric properties was investigated. The results were used to explain the experimental data for BaTiO3 fiber filled poly(dimethyl siloxane) published previously. The effect of ...

Breakdown of the quantum Hall effect at high values of injected current is explained as a consequence of an abrupt formation of a metallic conduction path from one edge of the sample to the other. Such a path is formed when regions of compressible liquid, where the long-range disorder potential is screened, get connected due to the strong electric field. Our theory explains various features of ...

A capacitor-based circuit model is proposed to explain the electrochemical delamination of two-dimensional materials from their native substrates where produced gas bubbles squeeze into the interface. The delamination is actually the electric breakdown of the capacitor formed between the solution and substrate. To facilitate the procedure, the backside of the ubstrate has to be shielded so that...

Electrical transport studies across nm-thick dielectric films can be complicated, and datasets compromised, by local electrical breakdown enhanced by nm-sized features. To avoid this problem we need to know the minimal voltage that causes the enhanced electrical breakdown, a task that usually requires numerous measurements and simulation of which is not trivial. Here we describe and use a model...

Electric field values measured inside thunderclouds have consistently been reported to be up to an order of magnitude lower than the value required for the conventional electrical breakdown of air. This result has made it difficult to explain how lightning frequently occurs in thunderclouds. A few different theories have been offered to explain the lightning initiation process, one of them bein...