Monitoring dissolved oxygen is essential to marine research, but the high redox potentials required drive sensing reactions have posed an ongoing instability issue in sensors. Here, a novel dual-gate configuration for organic electrochemical transistors that extends device stability window demonstrated. This paper presents sensor operating principle relates channel conductance on two gates. bro...

In this paper, the magnetic field effect on carrier transport phenomenon in double gate metal-oxide-semiconductor field-effect transistor (MOSFET) has been investigated. This is done by exploring Lorentz force and behavior of a semiconductor subjected to constant field. The modulates electrons position density as well potential distribution case silicon tunnel tunneling field-effects (FETs). mo...

In this paper, an analytical modeling is presentated to describe the channel noise in GME SGT/CGT MOSFET, based on explicit functions of MOSFETs geometry and biasing conditions for all channel length down to deep submicron and is verified with the experimental data. Results shows the impact of various parameters such as gate bias, drain bias, channel length ,device diameter and gate material wo...

The tendency to have better control of the flow of electrons in a channel of field-effect transistors (FETs) did lead to the design of two gates in junction field-effect transistors, field plates in a variety of metal semiconductor field-effect transistors and high electron mobility transistors, and finally a gate wrapping around three sides of a narrow fin-shaped channel in a FinFET. With the ...

Silicon-on-insulator (SOI) has been the forerunner of the CMOS technology in the last decade offering superior CMOS devices with higher speed, higher density, excellent radiation hardness and reduced second order effects for submicron VLSI applications. Recent experimental studies have invigorated interest in fully depleted (FD) SOI devices because of their potentially superior scalability rela...

This paper describes gate work function and oxide thickness tuning to realize novel circuits using dual-Vth independent-gate FinFETs. Dual-Vth FinFETs with independent gates enable series and parallel merge transformations in logic gates, realizing compact low power alternatives. Furthermore, they also enable the design of a new class of compact logic gates with higher expressive power and flex...