Silicon-on-insulator SOI metal-oxide-semiconductor field-effect transistors MOSFETs are excellent candidates to become an alternative to conventional bulk technologies. The most promising SOI devices for the nanoscale range are based on multiple gate structures such as double-gate DG MOSFETs. These devices could be used for high-frequency applications due to the significant increase in the tran...

This paper deals with the compact modeling of several emerging technologies: first, the double-gate MOSFET (DG MOSFET), and second, the carbon nanotube field-effect transistor (CNTFET). For CNTFETs, we propose two compact models, the first one with a classical behavior (like MOSFET), and the second one with an ambipolar behavior (Schottky-barrier CNTFET). All the models have been compared with ...

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Related Articles Homogeneity improvement of field emission beam from metallic nano-tip arrays by noble-gas conditioning Appl. Phys. Lett. 99, 073101 (2011) Analysis of electric field screening by the proximity of two knife-edge field emitters J. Appl. Phys. 110, 034905 (2011) Space charge limited electron flow in two dimensions without magnetic field J. Appl. Phys. 110, 033306 (2011) Electron f...

Related Articles Homogeneity improvement of field emission beam from metallic nano-tip arrays by noble-gas conditioning Appl. Phys. Lett. 99, 073101 (2011) Analysis of electric field screening by the proximity of two knife-edge field emitters J. Appl. Phys. 110, 034905 (2011) Space charge limited electron flow in two dimensions without magnetic field J. Appl. Phys. 110, 033306 (2011) Electron f...

In this paper, electrical characteristics of the double gate metal oxide semiconductor field effect transistor (DG MOSFET) and that of gate all around silicon nanowire transistor (GAA SNWT) have been investigated. We have evaluated the variations of the threshold voltage, the subthreshold slope, draininduced barrier lowering, ON and OFF state currents when channel length decreases. Quantum mech...

In this work, we report on the optimization of a double-gate silicon-on-insulator field effect device operation to maximize pH sensitivity. The operating point can be fine tuned by independently biasing the fluid and the back gate of the device. Choosing the bias points such that device is nearly depleted results in an exponential current response—in our case, 0.70 decade per unit change in pH....