Lanthanide (Ln3+) doping in alumina has shown great promise for stabilizing and promoting desirable phase formation to achieve optimized physical and chemical properties. However, doping alumina with Ln elements is generally accompanied by formation of new phases (i.e. LnAlO3, Ln2O3), and therefore inclusion of Ln-doping mechanisms for phase stabilization of the alumina lattice is indispensable...

In the past decades the minimum transistor size has been down-scaled according to Moore’s law. However, scaling of conventional MOSFET devices is limited due to short channel effects, gate insulator tunneling and limited control of doping concentrations. FinFETs are the most promising device structures in order to overcome these negative effects. The gate in a FinFET is wrapped around a thin si...

Nanoscale carbon-nanotube field-effect transistors (CNTFETs) have been a focus of recent studies in next-generation semiconductor architecture. However, in numerous CNTFETs that have been proposed, process variations, as well as measurement fluctuations, have occurred regularly, hampering the development of these devices for practical applications. Moreover, it is difficult to control the condu...

Evidence associating doping behavior with moral disengagement (MD) has accumulated over recent years. However, to date, research examining links between MD and doping has not considered key theoretically grounded influences and outcomes of MD. As such, there is a need for quantitative research in relevant populations that purposefully examines the explanatory pathways through which MD is though...