We show by employing density-functional theory calculations (including a hybrid functional) that ZnO surfaces can be stabilized by bulk dopants. As an example, we study the bulk-terminated ZnO (0001̄) surface covered with half a monolayer of hydrogen. We demonstrate that deviations from this half-monolayer coverage can be stabilized by electrons or holes from bulk dopants. The electron chemical ...

This study describes a new and simple approach to dope two-dimensional transition metal dichalcogenides (TMDCs) using the superatom Co6Se8(PEt3)6 as the electron dopant. Semiconducting TMDCs are wired into field-effect transistor devices and then immersed into a solution of these superatoms. The degree of doping is determined by the concentration of the superatoms in solution and by the length ...

An empirically determined measure of the solute drag force called the drag factor is derived and defined. The drag factor is the derivative of mobility with respect to grain size, and describes well the drag effect of solute in the six different aluminas measured. A normalized drag factor allows direct comparison of different dopants, and validation of theoretically predicted trends. This const...

X-ray photoelectron spectroscopy (XPS) is one of the best tools for studying the chemical modification of surfaces, and in particular the distribution and bonding of heteroatom dopants in carbon nanomaterials such as graphene and carbon nanotubes. Although these materials have superb intrinsic properties, these often need to be modified in a controlled way for specific applications. Towards thi...

Current methods for forming junctions in the source and drain regions of complementary metaloxide semiconductor (CMOS) transistor circuits use low-energy ion implantation and rapid thermal annealing (RTA). Spike annealing, with fast ramping and short dwell time at maximum temperature, has been shown to be advantageous for shallow-junction formation. Diffusion and electrical activation of implan...

Based on its enticing properties, graphene has been envisioned with applications in the area of electronics, photonics, sensors, bio-applications and others. To facilitate various applications, doping has been frequently used to manipulate the properties of graphene. Despite a number of studies conducted on doped graphene regarding its electrical and chemical properties, the impact of doping on...

Models and methods to determine the absolute binding energy of 4f -shell electrons in lanthanide dopants will be combined with data on the energy of electron transfer from the valence band to a lanthanide dopant. This work will show that it provides a powerful tool to determine the absolute binding energy of valence band electrons throughout the entire family of insulator and semiconductor comp...

Electrical control over the magnetic states of doped semiconductor nanostructures could enable new spin-based information processing technologies. To this end, extensive research has recently been devoted to examination of carrier-mediated magnetic ordering effects in substrate-supported quantum dots at cryogenic temperatures, with carriers introduced transiently by photon absorption. The relat...

Electron tomography is a powerful technique for the 3D characterization of the morphology of nanostructures. Nevertheless, resolving the chemical composition of complex nanostructures in 3D remains challenging and the number of studies in which electron energy loss spectroscopy (EELS) is combined with tomography is limited. During the last decade, dedicated reconstruction algorithms have been d...

Implantation of dopant ions in SiC has evolved according to the assumption that the best electrical results (i.e., carrier concentrations and mobility) is achieved by using the highest possible processing temperature. This includes implantation at > 600°C followed by furnace annealing at temperatures as high as 1750°C. Despite such aggressive and extreme processing, implantation suffers because...