the graphical technique for nonlinear circuits was described that enable us to optimize circuits to obtain maximum output power, maximum efficiency or minimum intermodulation. according to this method a high power amplifier in the ka band was designed. using a nonlinear model of the transistor, optimum slope for load-line was determined so that maximum power at the output was obtainable, then ...

Studies conducted on design and implementation of RF front-end for UWB in the 3.1-10.6 GHz range have been based on the intrinsically wideband approach .These include distributed grounded gate and source LNA with gains of 6 and 14 dB and noise figures of 3 and 5.3 dB respectively, wideband matched LNA with a gain of 7.5 dB, DLL at 528 MHz and PLL at 3.432 GHz for realizing multi-band OFDM carri...

Traditional distributed amplification techniques have allowed for high gain and bandwidth at the expense of low efficiency. The decreased efficiency is primarily due to the existence of an actively loaded artificial transmission line as the output, resulting in backward wave propagation. Using the same traditional input line distributed techniques to achieve high bandwidth, this research has ex...

A novel scheme is presented that can be used to efficiently pump optical waveguide amplifiers. It is based on the coupling between two adjacent waveguides, where pump light is gradually coupled from a nonabsorbing pump waveguide into the amplifier waveguide. The coupling between the waveguides in such a configuration is calculated using an improved coupled mode theory (CMT). The proposed distri...

Gain Clamped Semiconductor Optical Amplifier (GC-SOA), All Optical flip flop (AOff), Distributed bragg reflector (DBR), bistability property ABSTRACT In this article, the effect of coupling coefficient variations on an all optical Flip Flop performance based on gain clamped semiconductor optical amplifier according to distributed bragg reflectors by extensive band model of wave diffusion in tim...

The major issue of RRAM is the uneven sneak path that limits the array size. For the first time record large One-Resistor (1R) RRAM array of 128x128 is realized, and the array cells at the worst case still have good Low-/High-Resistive State (LRS/HRS) current difference of 378 nA/16 nA, even without using the selector device. This array has extremely low read current of 9.7 μA due to both low-c...

external amplifier was able to detect the sound waves from microphone on speaker and oscilloscope. The maximum amplitude of output speech signal of amplifier is 45 mV, and the maximum output of MEMS microphone is 1.125 µV.