We describe a simple method for enhancing the efficiency of coupling from a free-space transverse-magnetic (TM) plane-wave mode into a surface-plasmon-polariton (SPP) mode. The coupling structure consists a metal film with a dielectric-filled slit and a planar, dielectric layer on the slit-exit side of the metal film. By varying the dielectric layer thickness, the wavevector of the SPP mode on ...

Dielectric fluctuations underlie a wide variety of physical phenomena, from ion mobility in electrolyte solutions and decoherence in quantum systems to dynamics in glass-forming materials and conformational changes in proteins. Here we show that dielectric fluctuations also lead to noncontact friction. Using high sensitivity, custom fabricated, single crystal silicon cantilevers we measure ener...

The thin-film dielectric response of organic films confined within a surface forces apparatus ~SFA! and also between parallel sheets of atomically smooth mica is reported for the first time. Analysis is presented to infer dielectric properties of the organic film from the measured capacitance of the total system: sample, and mica sheets intervening between sample and electrodes. Measurements co...

High dielectric capacitor, that has around 1000 in dielectric constant, can be successfully formed by nanotransfer on non-heat-resisting substrates. PZT film could be released from the Si substrate and bonded onto the polymer one. The releasing characteristics have the relationships with the thickness of Pt layer. The formed PZT has perovskite structure and clear columnar texture.

As silicon devices keep shrinking in size while the circuits become more complex, they require low dielectric constant materials instead of silicon dioxide. SiOC films as low dielectric constant materials deposited by chemical vapor deposition were analyzed by Fourier transform infrared spectroscopy, elipsometry and nano-indentation to find the correlation between the dielectric constant and pr...

Vertical structured Gallium nitride (GaN) p-n junction diodes with improved breakdown properties have been demonstrated using high-k dielectric passivation underneath the field plate. Simulation results at a reverse voltage of 1 kV showed that the maximum electric field near the mesa-etched p-n junction edges covered with film of dielectric constant k = 10 was reduced to 2.0 MV/cm from 3.0 MV/c...

To improve measurements of the dielectric permittivity of nanometric portions by means of Local Dielectric Spectroscopy (LDS), we introduce an extension to current analytical models for the interpretation of the interaction between the probe tip of an electrostatic force microscope (EFM) and a thin dielectric film covering a conducting substrate. Using the proposed models, we show how more accu...

In this study, Pb(Zr0.52Ti0.48)O3/BiFeO3 [PZT/BFO] multilayer thin films were fabricated using the spin-coating method on a Pt(200 nm)/Ti(10 nm)/SiO2(100 nm)/p-Si(100) substrate alternately using BFO and PZT metal alkoxide solutions. The coating-and-heating procedure was repeated several times to form the multilayer thin films. All PZT/BFO multilayer thin films show a void-free, uniform grain s...

We analyze coherent anti-Stokes Raman scattering in thin-film dielectric waveguides. Extraordinarily large signal levels are predicted, and two applications of this phenomenon are discussed.

(111)-oriented and random oriented Pb0.8Ba0.2ZrO3 (PBZ) perovskite relaxor ferroelectric thin films were fabricated on Pt(111)/TiOx/SiO2/Si substrate by sol-gel method. Nano-scaled antiferroelectric and ferroelectric two-phase coexisted in both (111)-oriented and random oriented PBZ thin film. High dielectric tunability (i = 75%, E = 560 kV/ cm ) and figure-of-merit (FOM ~ 236) at room temperat...