In this work, we investigate the Body Diode (BD) of a 40mOhm, 1.2kV SiC MOSFETs. We performed DC measurements and switching measurements, at Room Temperature (RT) High (HT) (T=175°C), together with TCAD simulation calibration. focused on low side (LS) switch turn-on event, i.e., BD turn-off event. demonstrated that unipolar bipolar can both be achieved different V GS . With =-5V, conducts in mo...