Gallium Nitride (GaN) amplifiers have demonstrated very high power density as well as wide band width in previous research. This paper examines their use in supplying flat gain, power, and linearity across a large band width. It demonstrates two types of power amplifiers: a Ft Doubler (FT2) amplifier and a Cascode amplifier, both of which require a simple PCB tune. Both amplifiers show 0.2 to 4...

This paper describes the design of a CMOS capacitor-ratio-independent and gain-insensitive algorithmic analog-to-digital (A/D) converter. Using the fully differential switched-capacitor technique, the A/D converter is insensitive to capacitor-ratio accuracy as well as finite gain and offset voltage of operational amplifiers. The switch-induced error voltage becomes the only major error source, ...

Efficient RF power amplifiers used in third generation systems require linearization in order to reduce adjacent channel inter-modulation distortion, without sacrificing efficiency. Digital baseband predistortion is a highly cost-effective way to linearize power amplifiers (PAs). New communications services have created a demand for highly linear high power amplifiers (HPA's). Traveling Wave Tu...

Fujitsu has been developing gallium nitride high electron mobility transistors (GaNHEMT) for small transmitter amplifiers for Long Term Evolution (LTE) base stations. The use of GaN-HEMT in highly efficient transmitter amplifiers has attracted much attention because of its high breakdown voltage characteristics. High-efficiency amplifiers with high gain are needed to decrease the power consumpt...

AbstructThis paper describes the design of a CMOS capacitor-ratio-independent and gain-insensitive algorithmic analog-to-digital (A/D) converter. Using the fully differential switched-capacitor technique, the A/D converter is insensitive to capacitor-ratio accuracy as well as finite gain and offset voltage of operational amplifiers. The switch-induced error voltage becomes the only major error ...

A new non-linear method for design and analysis of solid state power amplifiers is presented and applied to an aluminum gallium nitride, gallium nitride (AlGaN-GaN) high electron-mobility transistor (HEMTs) on silicon-carbide (SiC) substrate for Ku band (12.4 13.6 GHz) applications. With combining output power of 8 transistors, maximum output power of 46.3 dBm (42.6 W), PAE of 43% and linear ga...

Class D amplifiers are typically very efficient, making them ideal candidates for portable applications that require long battery life and low thermal dissipation. However, electromagnetic interference (EMI) is an issue that commonly accompanies the Class D switching topology. Activeemissions limiting reduces radiated emissions and enables "filterless" operation, allowing designers to create sm...