A low-resistance ohmic contact to Mg-doped p-type GaN grown by metal-organic chemical vapor deposition (MOCVD) with a carrier concentration of 2 · 10 cm 3 using Pd/Ni/Au metallization was formed. An anneal at 500 C for 1 min in a flowing N2 ambient produced an excellent ohmic contact with a specific contact resistivity as low as 2.4 · 10 5 X cm. X-ray photoelectron spectroscopy (XPS) and Auger ...

Fretting is known to be a major cause of contact deterioration and failure, particularly in tin-plated contacts. During fretting the contact resistance generally increases slowly with time. Superimposed on this slow increase in contact resistance are rapid changes in contact resistance within fractions of a second, called intermittences or short duration discontinuities. Although intermittences...

Abstract Conductive-atomic force microscopy (C-AFM) and molecular dynamics (MD) simulations are used to investigate time-dependent electrical contact resistance (ECR) at the nanoscale. ECR is shown decrease over time as measured using C-AFM estimated two approaches from MD simulations, although experiments explore different scales. The show that dependence of attributable an increase in real ar...

Certain problems in which a cooled rigid punch indents an elastic half-space have no steady state solution. A simple model is described in which it is shown that this paradox is avoided by the assumption of a thermal resistance varying inversely with contact pressure. A limiting case of this system retains linearity and introduces a state of "imperfect" contact in which contact pressure is negl...