We study the electronic transport through a quantum wire (QW) with a strong side coupled quantum dot (QD). We obtain a linear conductance with lateral peaks when the gate voltage, is located near the edge of the conduction band. The calculated density of states shows, that these peaks are associated with renormalized localized levels out side of the conduction band. These results are compatible...

ELNES originates from electron transition from core orbital to conduction band, and the electron transition follows electron dipole transition. Thus, ELNES profile reflects the partial density of state of selected elements in the conduction band. By combining the aberration corrected STEM, electronic structure analysis with atomic resolution is possible. Thus, the EELS have been extensively obs...

Valenceand conduction-band edges of ultrathin oxides SiO2, HfO2, Hf0.7Si0.3O2, ZrO2, and Al2O3 grown on a silicon substrate have been measured using ultraviolet photoemission and inverse photoemission spectroscopies in the same UHV chamber. The combination of these two techniques has enabled the direct determination of the oxide energy gaps as well as the offsets of the oxide valenceand conduct...

The study of the evolution of the conduction band in dense gases and supercritical fluids near the critical point has been complicated by a lack of precise experimental measurements. Both photoemission from an electrode immersed in the fluid and field ionization of a molecule doped into the fluid have been used to probe solvent density effects on the energy of an excess electron as a function o...

0009-2614/$ see front matter 2010 Elsevier B.V. A doi:10.1016/j.cplett.2010.08.086 ⇑ Corresponding author. Fax: + 1 310 267 0319. E-mail address: [email protected] (D. Neuhause Hückel simulations of large finite graphene nanomeshes with lithographically induced holes show sizable band gaps in the conduction while the optical absorption has generally the same semi-metal character as pure graphen...

The k·p theory allows to describe the band structure analytically. After the pioneering work by Luttinger and Kohn [1] the six-band k·p method has become widely used to model the valence band in silicon. The conduction band in silicon is usually approximated by three pairs of equivalent minima located near the Xpoints of the Brillouin zone. It is commonly assumed that close to the minima the el...

We report scanning tunneling microscopy and ballistic electron emission microscopy studies of the electronic states of the uncovered and chemisorbed-oxygen covered surface of AlOx tunnel barrier layers. These states change when chemisorbed oxygen ions are moved into the oxide by either flood gun electron bombardment or by thermal annealing. While untreated samples exhibit band tails extending t...

We studied enhancement and suppression of spontaneous emission in thin-film InGaAs/InP photonic crystal at room temperature. Angular resolved photoluminescence measurements were used to determine experimentally the band structure of conduction band of such a photonic crystal and overall enhancement of spontaneous emission. We demonstrated spontaneous emission enhancement in thin slab photonic c...

Filled skutterudites R(x)Co4Sb12 are excellent n-type thermoelectric materials owing to their high electronic mobility and high effective mass, combined with low thermal conductivity associated with the addition of filler atoms into the void site. The favourable electronic band structure in n-type CoSb3 is typically attributed to threefold degeneracy at the conduction band minimum accompanied b...

A tight-binding-based microscopic theory is developed that accounts for quasilinear conduction bands appearing commonly in transparent conducting oxides. It is found that the interaction between oxygen p and metal s orbtials plays a critical role in determining the band structure around the conduction-band minimum. Under certain types of short-range orders, the tight-binding model universally l...