نتایج جستجو برای: compositionally graded
تعداد نتایج: 31700 فیلتر نتایج به سال:
A range of modern applications require large and tunable dielectric, piezoelectric or pyroelectric response of ferroelectrics. Such effects are intimately connected to the nature of polarization and how it responds to externally applied stimuli. Ferroelectric susceptibilities are, in general, strongly temperature dependent, diminishing rapidly as one transitions away from the ferroelectric phas...
for enhanced dielectric response and tunability M. B. Okatan, A. L. Roytburd, J. V. Mantese, and S. P. Alpay Materials Science and Engineering Program and Institute of Materials Science, University of Connecticut, Storrs, Connecticut 06269, USA Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742, USA United Technologies Research Center, East Har...
Spatially composition-graded CdS(x)Se(1-x) (x = 0-1) nanowires are grown and transferred as parallel arrays onto Si/SiO(2) substrates by a one-step, directional contact printing process. Upon subsequent device fabrication, an array of tunable-wavelength photodetectors is demonstrated. From the spectral photoconductivity measurements, the cutoff wavelength for the device array, as determined by ...
The gradual substitution of sulfur atoms (S) by selenium (Se) in Cu2ZnSn(S1-y Sey )4 compounds causes a linear increase the optical band-gap. For this reason, those are suitable to implement band-gap engineering compositionally graded solar cells. In paper, we have worked take advantage feature enhance performances basic uniform Kesterite and Stannite CZTS1–ySey influence Tow grading profile wa...
Dislocations in compositionally graded virtual substrates and InAsSb epitaxial layers for long wavelength (8–12 μm) photodetectors have been investigated with high-resolution x-ray topography (XRT). By varying the imaging conditions, properties of substrate could be individually characterized. We observe formation misfit dislocations near interface predominantly along (110) direction less relax...
In this paper we propose a novel RF LDMOS structure which employs a thin strained silicon layer at the top of the channel and the N-Drift region. The strain is induced by a relaxed Si0.8 Ge0.2 layer which is on top of a compositionally graded SiGe buffer. We explain the underlying physics of the device and compare the proposed device with a conventional LDMOS in terms of energy band diagram and...
High indium content In0.86Al0.14As/In0.86Ga0.14As double heterojunction bipolar transistors (DHBTs) were grown on InP substrates using thin 6.0 Å metamorphic compositionally graded buffer layers. Good DC and RF characteristics have been demonstrated, with high gain (~30), breakdown voltage greater than 2.5 V, turn-on voltage reduction by a factor of two compared to existing InP bipolar technolo...
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