نتایج جستجو برای: cntfet modelling

تعداد نتایج: 162484  

Journal: :International Journal of Reconfigurable and Embedded Systems (IJRES) 2019

2012
Martin Claus Stefan Blawid Paulius Sakalas Michael Schröter

A time-dependent effective-mass SchrödingerPoisson solver is used to study the frequency dependence of the gate capacitance of a short Schottky-barrier carbon nanotube field-effect transistor (CNTFET). A delayed (re)charging of the channel causes a (non-quasi-static) drop of the gate capacitance for higher frequencies on a characteristic scale, which can be related to the escape time of the car...

2010
Rui Tang Kyung-Ki Kim Yong-Bin Kim

This paper proposes a novel 8-phase VCO design implemented using Carbon Nanotube Field-Effect Transistors (CNTFETs). Carbon Nanotube is a fast growing and promising technology to replace Traditional MOSFETs. Its operation principles and device structure are similar to the conventional bulk CMOS, however it shows a great power delay improvement over bulk MOSFET due to its near-ballistic CNT tran...

Journal: :International Journal of Research in Engineering and Technology 2014

In this article a low power and low latency 4-2 compressor has been presented. By using modified truth table and Pass Transistor Logic (PTL) a novel structure has been proposed which outperforms previous designs from the frequency of operation view point. The proposed design method has reduced the total transistor count considerably which will lead to reduced power consumption and smaller activ...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه محقق اردبیلی - دانشکده فنی 1394

نانو الکترونیک شاخه ای از فناوری نانو است که از نظر ساخت وسایل الکترونیکی کوچک تر، سریع تر و کم مصرف تر نقش بسیار مهمی در تکنولوژی جهانی دارد. کوچکتر شدن ابعاد ترانزیستورهای سلیکونی رایج موجب ایجاد مشکلاتی از جمله ایجاد جریانات نشتی و خازن های پارازیتی می شود که بروز چنین مشکلاتی خود موجب افزایش توان مصرفی، تاخیر و افزایش حاضلضرب تاخیر در توان می گردد. تکنولوژی ترانزیستور اثر میدانی نانولوله کر...

2012
V.Saravanan V.Kannan

Dual modulus prescaler is one of the main building blocks in Frequency synthesizers. Which gives the flexibility to select channels on the basis of the number of times each of the modulus is selected. Modern frequency synthesizer requires high speed, low power prescaler. This paper proposes the design of such a prescaler using the carbon nanotube based transistor. The two most important perform...

2013
Sameer Prabhu Nisha Sarwade

The steady reduction in the dimension of transistors, according to Moore's law has been the main force behind the regular leaps in the level of performance of the silicon ICs. Due to the effects like the short channel effects, tunnelling effect, additional heat dissipation, interconnect problems etc problems arise. So it is not possible to reduce the size further. Hence now it is necessary to a...

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