نتایج جستجو برای: cntfet modelling
تعداد نتایج: 162484 فیلتر نتایج به سال:
A time-dependent effective-mass SchrödingerPoisson solver is used to study the frequency dependence of the gate capacitance of a short Schottky-barrier carbon nanotube field-effect transistor (CNTFET). A delayed (re)charging of the channel causes a (non-quasi-static) drop of the gate capacitance for higher frequencies on a characteristic scale, which can be related to the escape time of the car...
This paper proposes a novel 8-phase VCO design implemented using Carbon Nanotube Field-Effect Transistors (CNTFETs). Carbon Nanotube is a fast growing and promising technology to replace Traditional MOSFETs. Its operation principles and device structure are similar to the conventional bulk CMOS, however it shows a great power delay improvement over bulk MOSFET due to its near-ballistic CNT tran...
In this article a low power and low latency 4-2 compressor has been presented. By using modified truth table and Pass Transistor Logic (PTL) a novel structure has been proposed which outperforms previous designs from the frequency of operation view point. The proposed design method has reduced the total transistor count considerably which will lead to reduced power consumption and smaller activ...
نانو الکترونیک شاخه ای از فناوری نانو است که از نظر ساخت وسایل الکترونیکی کوچک تر، سریع تر و کم مصرف تر نقش بسیار مهمی در تکنولوژی جهانی دارد. کوچکتر شدن ابعاد ترانزیستورهای سلیکونی رایج موجب ایجاد مشکلاتی از جمله ایجاد جریانات نشتی و خازن های پارازیتی می شود که بروز چنین مشکلاتی خود موجب افزایش توان مصرفی، تاخیر و افزایش حاضلضرب تاخیر در توان می گردد. تکنولوژی ترانزیستور اثر میدانی نانولوله کر...
Dual modulus prescaler is one of the main building blocks in Frequency synthesizers. Which gives the flexibility to select channels on the basis of the number of times each of the modulus is selected. Modern frequency synthesizer requires high speed, low power prescaler. This paper proposes the design of such a prescaler using the carbon nanotube based transistor. The two most important perform...
The steady reduction in the dimension of transistors, according to Moore's law has been the main force behind the regular leaps in the level of performance of the silicon ICs. Due to the effects like the short channel effects, tunnelling effect, additional heat dissipation, interconnect problems etc problems arise. So it is not possible to reduce the size further. Hence now it is necessary to a...
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